Photoelectrochemistry of Hydrogenated Amorphous Silicon (a‐Si:H)

Avigal, Y.; Hodes, Gary; Manassen, J.; Vainas, B.; Gibson, R. E.

doi:10.1149/1.2129852

Cited by 7 publications

(3 citation statements)

References 10 publications

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“…For nonaqueous solvents, data exist for n-a-Si:H in abolute ethanol using a ferrocene/ferrocenium ion couple. 16 Open-circuit photovoltage of ~500 mV and short-circuit current of 1.2 mA/cm2 were obtained at 100 mW/cm2.…”

Section: Introductionmentioning

confidence: 95%

Amorphous silicon hydride. Preparation, characterization, and photoelectrochemistry

Becker¹,

Subrahmanyam²,

Epps³

et al. 1983

J. Phys. Chem.

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two branches of bistable states and rapid jumps during oscillation just as [Br"] crosses this critical value.In principle, either C102 or HC102 could also compete for HBr02 via reaction -T2 or T4, respectively. However, under the conditions employed in these studies both chlorine species concentrations always remain too low to compete with reaction B4. At higher [HC102], chlorous acid control could play a role, but the present experimental system must be viewed as a bromate-driven, bromidecontrolled oscillator.We have not explored the mechanism of the other bromate-chlorous acid-reductant systems in any detail. It seems clear, however, that the reducing agent must have the ability to replace the bromide flow by producing bromide from brómate at an appropriate rate. How this reduction may take place in the related bromate-catalyst-reductant systems will be discussed in a forthcoming paper.10We should also point out that, although the mechanism in Table II bears many similarities to that employed by Bar-Eli,6"7 there are differences of fundamental importance. In particular, though reactions -TI and T2 are analogous to the corresponding ceric and cerous reactions with Br02, kT1 is 4 orders of magnitude greater than the corresponding cerium rate constant. This large an increase in that rate would be sufficient to destroy the bistability in the cerium system.21 The additional reactions T3 and T4 must then play some essential role in the chlorous acid system.Acknowledgment. We thank Mohamed Alamgir and Patrick De Kepper for helpful discussions and Kenneth Kustin for a critical reading of the manuscript. This work was supported by National Science Foundation grants CHE7905911 and CHE8204085.

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Section: Introductionmentioning

confidence: 95%

Amorphous silicon hydride. Preparation, characterization, and photoelectrochemistry

Becker¹,

Subrahmanyam²,

Epps³

et al. 1983

J. Phys. Chem.

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confidence: 99%

“…Its suitability as solar material for photoelectroehemical solar cells has also been explored (2)(3)(4)(5)(6)(7). Samples of intrinsic and n-type a-Si have been examined as semiconductor photoelectrodes in aqueous and nonaqueous electrolytes (2)(3)(4)(5). Junctions of intrinsic material on p and n a-Si contacts have been made to take advantage of the differing work functions between the two arrangements to drive electrochemical reduction and oxidation reactions at the same a-Si surface (6)(7).…”

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confidence: 99%

Photoelectrochemical Analysis of Doped Hydrogenated Amorphous Silicon

Spitler

Cary

1989

J. Electrochem. Soc.

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Photoelectrochemical techniques have been employed in an analysis of p‐ and n‐doped, hydrogenated amorphous silicon (a‐Si) and hydrogenated amorphous silicon carbide alloy films false(normala‐normalSiCfalse) . Materials with a range of doping densities were examined. Flatband potentials of n a‐Si and normalp a‐normalSiC electrodes were determined and used to predict the maximum photovoltage attainable from a composite p‐i‐n structure made from these films. Energy gaps for optical absorption and photocurrent production were also measured, and the relationship of the energy gap for photocurrent to the mobility gap of these materials is discussed. An optical interference effect in these thin film electrodes was used to deduce the effective doping density of the n‐type materials. Electrochemical measures have been established to quantify the extent of defects in the films caused by the low doping efficiencies of the dopant gases.

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