Photoelectron Holography Study of La(O,F)BiS<sub>2</sub>

Li, Yajun; Sun, Zexu; Kataoka, Noriyuki; Setoguchi, Taro; Hashimoto, Yusuke; Takeuchi, Soichiro; Koga, Shunjo; Demura, Satoshi; Noguchi, Kanako; Sakata, Hideaki; Mizuguchi, Yoshikazu; Matsushita, Tomohiro; Wakita, Takanori; Muraoka, Yuji; Yokoya, Takayoshi

doi:10.7566/jpsj.92.044801

Cited by 5 publications

(3 citation statements)

References 37 publications

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“…For (1), the Bi 4f core spectrum of the La(O,F)BiS 2 sample showed an additional feature, also reported in Ref. 23, and could be fitted with two components, whereas that of La (O,F)BiSSe showed only one peak. This difference prevents a simple comparison of the two datasets.…”

Section: Resultssupporting

confidence: 75%

“…In this study, to consider the effect of crystal termination at a surface, spherical-dome-shaped atomic clusters of radius 3 nm, in which the distance between the atom at the center (emitter) and the surface depends on the position of the emitter, were used. 23) Simulations were performed for 300 K using the inelastic mean free path of 1.5 nm and Debye temperature of 224 K. 24) The reconstructed atomic images were prepared using an algorithm named SPEA-L1. 15,22) A two-dimensional translation symmetry was used to improve the quality of the reconstructed atomic images.…”

Section: Experimental Methodsmentioning

confidence: 99%

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Photoelectron holographic evidence for the incorporation site of Se and suppressed atomic displacement of the conducting layer of La(O,F)BiSSe

Li,

Sun,

Kataoka

et al. 2023

Jpn. J. Appl. Phys.

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La(O,F)BiS2-xSex is a layered material that is considered to be a candidate exotic superconductor as well as a promising thermoelectrical material. We performed soft X-ray photoelectron holography to study the Se incorporation site and the local atomic arrangement of the conducting layer. A comparison of the experimental holograms with the simulated holograms indicates that Se atoms preferentially occupy the S sites in the conducting Bi-S plane of La(O,F)BiS2. A comparison between the state-of-the-art holographic reconstructions of La(O,F)BiSSe and La(O,F)BiS2 suggests that Se substitution suppresses the displacement of S atoms in La(O,F)BiS2. These results provide photoelectron holographic evidence for the Se incorporation site and the Se-induced suppression of in-plane disorder.

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Section: Resultssupporting

confidence: 75%

Section: Experimental Methodsmentioning

confidence: 99%

Photoelectron holographic evidence for the incorporation site of Se and suppressed atomic displacement of the conducting layer of La(O,F)BiSSe

Li,

Sun,

Kataoka

et al. 2023

Jpn. J. Appl. Phys.

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“…The base pressure of the main chamber was 2.8 × 10 –8 Pa. PEH simulations were performed using the 3D-AIR-IMAGE software (version 1.1.09). The total analysis multiple scattering pattern simulation code was included in the software. − For the simulations, we employed an electron kinetic energy of 800 eV, a temperature of 300 K, and an inelastic mean free path of 10 Å.…”

mentioning

confidence: 99%

Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga₂O₃(001)

Tsai,

Hashimoto,

Sun

et al. 2024

Nano Lett.

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We investigated atomic site occupancy for the Si dopant in Si-doped κ-Ga 2 O 3 (001) using photoelectron spectroscopy (PES) and photoelectron holography (PEH). From PES and PEH, we found that the Si dopant had one chemical state, and three types of inequivalent Si substitutional sites (Si Ga ) were formed. The ratios for the inequivalent tetrahedral, pentahedral, and octahedral Si Ga sites were estimated to be 55.0%, 28.1%, and 16.9%, respectively. Higher (lower) ratios for the three inequivalent Si Ga sites may come from a lower (higher) formation energy. The Tetra (Octa) Si Ga site has the highest (lowest) ratio of the three Si Ga sites since it has the lowest (highest) formation energy. We suggest that the tetrahedral Si Ga site is due to the active dopant site, whereas the pentahedral and octahedral Si Ga sites can be attributed to the inactive dopant sites for Si-doped κ-Ga 2 O 3 (001).

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Schematic Structural Analysis of Honeycomb Structure Ultrathin Ce–Ti–O Films on Pt(111) Using Photoelectron Holography and Ab Initio Calculation

Li,

Yamada,

Yamada

et al. 2024

J. Phys. Chem. C

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√3 × √3)R30 honeycomb superstructure ultrathin Ce− Ti−O film was prepared and confirmed using scanning tunneling microscopy (STM) and low-energy electron diffraction. The structural model of (√3 × √3)R30 honeycomb superstructure ultrathin film is determined using ab initio calculation and photoelectron holography. In the density functional theory (DFT) calculations, the (√3 × √3)R30 honeycomb superstructural model was calculated in two different conditions. The photoelectron holograms of Ti 2+ and Ti 3+ were separated from Ti 2p photoelectron spectra of (√3 × √3)R30 honeycomb superstructure, using a display-type retarding field analyzer. From the different forward-focusing peaks on the photoelectron holograms of Ti 2+ and Ti 3+ , the vertical height between Ti divalent atoms and O atoms is higher than that between Ti trivalent atoms and O atoms. Also, the distance and direction of O and Ce atoms above Ti could be found. As a result, the simulated photoelectron holograms and the simulated STM image of the calculated Ce−Ti−O honeycomb superstructural model agree with the experimental photoelectron holograms and the experimental STM images.

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Photoelectron Holography Study of La(O,F)BiS₂

Cited by 5 publications

References 37 publications

Photoelectron holographic evidence for the incorporation site of Se and suppressed atomic displacement of the conducting layer of La(O,F)BiSSe

Photoelectron holographic evidence for the incorporation site of Se and suppressed atomic displacement of the conducting layer of La(O,F)BiSSe

Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga₂O₃(001)

Schematic Structural Analysis of Honeycomb Structure Ultrathin Ce–Ti–O Films on Pt(111) Using Photoelectron Holography and Ab Initio Calculation

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Photoelectron Holography Study of La(O,F)BiS2

Cited by 5 publications

References 37 publications

Photoelectron holographic evidence for the incorporation site of Se and suppressed atomic displacement of the conducting layer of La(O,F)BiSSe

Photoelectron holographic evidence for the incorporation site of Se and suppressed atomic displacement of the conducting layer of La(O,F)BiSSe

Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001)

Schematic Structural Analysis of Honeycomb Structure Ultrathin Ce–Ti–O Films on Pt(111) Using Photoelectron Holography and Ab Initio Calculation

Contact Info

Product

Resources

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Photoelectron Holography Study of La(O,F)BiS₂

Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga₂O₃(001)