Appl. Phys. A
 2016
DOI: 10.1007/s00339-016-0312-4
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Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD

Feng Liang
1
,
P. Chen
2
,
Degang Zhao
3
et al.
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Cited by 4 publications
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Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD

Rahman
1
,
Shuhaimi
2
,
Khudus
3
et al. 2021
Journal of Elec Materi
8
0
1
0
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Diminishing the Induced Strain and Oxygen Incorporation on Aluminium Nitride Films Deposited Using Pulsed Atomic-Layer Epitaxy Techniques at Standard Pressure MOCVD

Rahman
1
,
Shuhaimi
2
,
Khudus
3
et al. 2021
Journal of Elec Materi
8
0
1
0
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Influence of metallic surface states on electron affinity of epitaxial AlN films

Mishra
1
,
Krishna
2
,
Aggarwal
3
et al. 2017
Applied Surface Science
22
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6
1
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Structural evolution of high temperature annealed single-crystalline AlN on SiC substrate

Li,
Yuan,
Cai
et al. 2024
Eur. Phys. J. Spec. Top.
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