Photoelectron spectroscopy study of the effect of substrate doping on an HfO2/SiO2/n-Si gate stack

Stability and interface quality of GeO2 films grown on Ge by atomic oxygen assisted deposition

“…This picture is also consistent with the recent theoretical prediction of a transition layer in the relaxed GeO 2 / Ge structure from first principles investigations. 25 This behavior can be alternatively attributed to the interface confined screening from substrate electrons as observed at the SiO 2 / Si system 26 or to a differential charging between the oxide and the semiconductor as discussed for the HfO 2 on GaAs 27 although these effects have not been evidenced in the Ge+MO sample and in the thin AO sample ͑see the fol-lowing͒. The spectrum recorded after exposure to air clearly shows that the overall oxide contribution shifts to higher BEs thus confirming the tendency to form bonds with higher Ge oxidation states after moisture absorption as in case of the Ge+MO sample.…”