Photoelectron spectroscopy study of thin Ag films deposited on to amorphous In–Ga–Zn–O surface

Kang, Se Jun; Baik, Jaeyoon; Ha, Tae Kwon; Park, Chong Do; Shin, Hyun‐Joon; Chung, Jinwook; Lee, Jaecheol

doi:10.1016/j.tsf.2014.08.043

Cited by 3 publications

(1 citation statement)

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“…For example, studies have shown that including oxygen in the ambient during sputter deposition of a-IGZO films is important for controlling carrier concentrations, and limiting oxygen deficiencies. , However, the exact nature of defects in a-IGZO are only beginning to be understood using theoretical methods . X-ray photoelectron spectroscopy (XPS) is a powerful technique to study chemical state information at surfaces and has been used to investigate a-IGZO films. − For example, deep subgap states have been observed on surfaces that have been lightly sputtered to remove contamination after exposure to ambient air . A rigid shift in Ga 3d, In 4d, and Zn 3d spectra to higher binding energies, for contaminated and sputter phase-separated films, were correlated to accumulated charge at the a-IGZO surface.…”

Section: Introductionmentioning

confidence: 99%

Interfacial Chemistry-Induced Modulation of Schottky Barrier Heights: In Situ Measurements of the Pt–Amorphous Indium Gallium Zinc Oxide Interface Using X-ray Photoelectron Spectroscopy

Flynn

Oleksak

Thevuthasan

et al. 2018

ACS Appl. Mater. Interfaces

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A method to understand the role of interfacial chemistry on the modulation of Schottky barrier heights for platinum and amorphous indium gallium zinc oxide (a-IGZO) interfaces is demonstrated through thermal processing and background ambient pressure control. In situ X-ray photoelectron spectroscopy was used to characterize the interfacial chemistries that modulate barrier heights in this system. The primary changes were a significant chemical reduction of indium, from In to In, that occurs during deposition of Pt on to the a-IGZO surface in ultrahigh vacuum. Postannealing and controlling the background ambient O pressure allows further tuning of the reduction of indium and the corresponding Schottky barrier heights from 0.17 to 0.77 eV. Understanding the detailed interfacial chemistries at Pt/a-IGZO interfaces may allow for improved electronic device performance, including Schottky diodes, memristors, and metal-semiconductor field-effect transistors.

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