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Pacilé, D.; Papagno, M.; Lavagnini, M.; Berger, H.; Degiorgi, L.; Grioni, M.

doi:10.1103/physrevb.76.155406

Cited by 18 publications

(15 citation statements)

References 31 publications

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“…In this section, we review photodetectors based on ultrathin group IVB metal trichalcogenides, such as TiS 3 , ZrS 3 , HfS 3 , ZrSe 3 , and HfSe 3 . These trichalcogenide compounds possess direct or indirect bandgaps between ∼1.0 eV to ∼3.1 eV, covering the UV to NIR region . Island et al have successfully isolated few‐layer TiS 3 nanoribbons (NRs) with thicknesses down to 10–30 nm via mechanical exfoliation during the transfer process of NRs and probed their photoresponses .…”

Section: Photoconductors/phototransistors Based On 2d Layered Semiconmentioning

confidence: 99%

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Xie

Mak

Tao

et al. 2016

Adv Funct Materials

593

547

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1 of 41) 1603886However, despite its high absorption coefficient, [15] single-layer graphene can absorb only ≈2.3% of incident visible and infrared (IR) light due to its thinness, [16,17] which is undesirable for high performance photodetectors that require strong light absorption. Graphene's gaplessness also leads to short photocarrier lifetime in pure graphene, which is unfavorable for efficient photocurrent generation. [18][19][20] In addition to graphene, this family of materials contains an extremely large range of other 2D-layered materials that have recently attracted much research interest. [1][2][3][4][5][6][7][8] Similar to graphene, being atomically thin, these materials exhibit a wide range of unique electrical, optical, thermal, and mechanical properties that can never be seen in their three-dimensional (3D) bulk counterparts due to the dimensionality confinement effect and modulation in their band structures. [21,22] These 2D-layered materials can be metals, semiconductors, insulators, superconductors, topological insulators, or paramagnetic, diamagnetic, ferromagnetic, or anti-ferromagnetic, etc., depending on their composition and phases. [23,24] Among these materials, particular attention has been paid to 2D layered semiconductors thanks to their unique electronic [2,[24][25][26] and optoelectronic properties, [27,28] which arise from their appreciable bandgaps ranging from IR to UV and throughout the visible range.The optical and optoelectronic properties of 2D layered semiconductors are strongly dependent on their number of layers due to the quantum confinement effects in the out-of-plane direction and changes in symmetry. [29,30] This layer-dependent modulation of physical properties, such as bandgap structure, is particularly evident in the semiconducting transition metal dichalcogenides (TMDs) [2,7,29,31,32] and few-layer black phosphorus (BP). [33,34] Another effect induced by vertical quantum confinement is the increased absorption efficiency, which results from the strongly bound excitons due to the reduced thickness. [29,35,36] The atomic thickness of a 2D layered semiconductor also leads to high transparency [37] and good mechanical flexibility, [38] properties of particular interest for novel device applications such as flexible, wearable, or portable electronics. Despite their high transparency, 2D layered semiconductors can strongly interact with incident light, leading to enhanced photon absorption and electron-hole creation due to the existence of Van Hove singularities in their electronic density of states. [39] It has also been reported that 2D layered materials possess extraordinary elastic modulus and large strain (>10%) before rupture, [40][41][42][43] which allow for tuning their electronic and optical properties Following a significant number of graphene studies, other two-dimensional (2D) layered materials have attracted more and more interest for their unique structures and distinct physical properties, which has opened a window for realizing novel electronic or optoelectr...

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Section: Photoconductors/phototransistors Based On 2d Layered Semiconmentioning

confidence: 99%

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Xie

Mak

Tao

et al. 2016

Adv Funct Materials

593

547

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show abstract

“…In this family of compounds HfS 3 , HfSe 3 , ZrS 3 , ZrSe 3 , and TiS 3 are semiconductors with band gaps within the range of infra red or visible spectrum, making them potential materials for third-generation solar cells [17,25,32,33]. The electronic and optical properties of the semiconducting members of this family of TMCs have been reported by a number of experimental techniques [32,[34][35][36][37][38]. Theoretically, there are few reports on the electronic properties of members of this family.…”

Section: Papermentioning

confidence: 99%

“…The electronic and optical properties of the semiconducting members of this family of TMCs have been reported by a number of experimental techniques . Theoretically, there are few reports on the electronic properties of members of this family.…”

Section: Introductionmentioning

confidence: 99%

Electronic and optical properties of MX₃ (M = Ti, Zr and Hf; X = S, Se) structures: A first principles insight

Abdulsalam

Joubert

2016

Physica Status Solidi (b)

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Abstractauthoren Abstractauthoren The electronic and optical properties of semiconducting TiS3, HfS3, HfSe3, ZrS3, and ZrSe3 with structure P21/m have been investigated for the first time at the G0W0 and BSE level of approximations, respectively. The structures were relaxed using PBE with the inclusion of van der Waal's correction terms to account for long‐range dispersion forces, which is a necessary ingredient in predicting an accurate description of structural properties of layered systems. In order to predict reasonable estimates of the electronic properties, MBJ, HSE06, and G0W0 were used to calculate the fundamental band gaps of the structures and the Bethe–Salpeter equation (BSE) was solved to obtain an accurate description of the optical properties of the compounds. It is found that the compounds have G0W0 band gaps between 0.58 to 2.17 eV. Their optical absorption spectra revealed that they start to absorb light in the range of 0.9–1.63 eV making them potential materials for third‐generation solar photovoltaic applications and possible photo‐catalysis applications.

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“…Some examples of these materials are black phosphorus, 7,13,14 group-V TMDCs (ReS 2 and ReSe 2 ), 11,12 and transition metal trichalcogenides (MX 3 ). [15][16][17][18][19] These materials differ from isotropic layered materials in that each individual layer consists of a superlattice of 1D chains extending along one particular lattice direction. Considering in-plane structural anisotropy, angle dependent Raman measurements have been performed to determine the crystal lattice direction of BPs, ReS 2 , and ReS 2 .…”

Section: Introductionmentioning

confidence: 99%

Strong dichroic emission in the pseudo one dimensional material ZrS₃

et al. 2016

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a Zirconium trisulphide (ZrS 3 ), a member of the layered transition metal trichalcogenides (TMTCs) family, has been studied by angle-resolved photoluminescence spectroscopy (ARPLS). The synthesized ZrS 3 layers possess a pseudo one-dimensional nature where each layer consists of ZrS 3 chains extending along the b-lattice direction. Our results show that the optical properties of few-layered ZrS 3 are highly anisotropic as evidenced by large PL intensity variation with the polarization direction. Light is efficiently absorbed when the E-field is polarized along the chain (b-axis), but the field is greatly attenuated and absorption is reduced when it is polarized vertical to the 1D-like chains as the wavelength of the exciting light is much longer than the width of each 1D chain. The observed PL variation with polarization is similar to that of conventional 1D materials, i.e., nanowires, and nanotubes, except for the fact that here the 1D chains interact with each other giving rise to a unique linear dichroism response that falls between the 2D ( planar) and 1D (chain) limit. These results not only mark the very first demonstration of PL polarization anisotropy in 2D systems, but also provide novel insight into how the interaction between adjacent 1D-like chains and the 2D nature of each layer influences the overall optical anisotropy of pseudo-1D materials. Results are anticipated to have an impact on optical technologies such as polarized detectors, near-field imaging, communication systems, and bio-applications relying on the generation and detection of polarized light.

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Photoemission and optical studies ofZrSe3,HfSe3, and

Cited by 18 publications

References 31 publications

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Electronic and optical properties of MX₃ (M = Ti, Zr and Hf; X = S, Se) structures: A first principles insight

Strong dichroic emission in the pseudo one dimensional material ZrS₃

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Photoemission and optical studies ofZrSe3,HfSe3, and

Cited by 18 publications

References 31 publications

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Photodetectors Based on Two‐Dimensional Layered Materials Beyond Graphene

Electronic and optical properties of MX3 (M = Ti, Zr and Hf; X = S, Se) structures: A first principles insight

Strong dichroic emission in the pseudo one dimensional material ZrS3

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Product

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Electronic and optical properties of MX₃ (M = Ti, Zr and Hf; X = S, Se) structures: A first principles insight

Strong dichroic emission in the pseudo one dimensional material ZrS₃