Photoemission and STM study of an In nanocluster array on the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mtext>Si</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>111</mml:mn></mml:mrow><mml:mo>)</mml:mo></mml:mrow><mml:mtext>−</mml:mtext><mml:mn>7</mml:mn><mml:mo>×</mml:mo><mml:mn>7</mml:mn></mml:mrow></mml:math>surface

Byun, J. H.; Ahn, Joung Real; Choi, Won Hoon; Kang, Pilgyu; Yeom, Han Woong

doi:10.1103/physrevb.78.205314

Cited by 14 publications

(8 citation statements)

References 40 publications

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“…This preservation of the cluster appearance is compelling Fig. 3(d)] with the known structure for group-III 7 × 7 magic clusters, 16,50 is shown in Fig. 4(d).…”

supporting

confidence: 67%

Directed assembly of one-dimensional magic cluster arrays by domain boundaries

Mark

McLean

2012

Phys. Rev. B

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The most commonly occurring boundary separating Ge-5 × 5 domains grown on Si(111) is the B[2 2] domain boundary. We demonstrate that this boundary can be used to template one-dimensional arrays of identical In and Ga magic clusters with a lattice constant of 3.3 nm. This is larger than the lattice constant of the two-dimensional magic cluster arrays templated by the Si(111)-7 × 7 surface reconstruction (2.7 nm), although the magic clusters have the same structure. We also demonstrate that a necessary condition for cluster growth at the domain boundary is the presence of faulted dimer-adatom-stacking-fault-7 × 7 half unit cells. The relatively unexplored possibility of exploiting the unique structural and electronic properties of domain boundaries in nanostructured materials is discussed.

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“…This preservation of the cluster appearance is compelling Fig. 3(d)] with the known structure for group-III 7 × 7 magic clusters, 16,50 is shown in Fig. 4(d).…”

supporting

confidence: 67%

Directed assembly of one-dimensional magic cluster arrays by domain boundaries

Mark

McLean

2012

Phys. Rev. B

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“…Different wire dimensions correspond to different rated operating temperatures. Aimed to improve the evaporation temperature in references (about 1000 °C) [ 20 , 21 , 22 ], a thinner Fe wire was selected to realize a higher temperature (about 1300 °C) and reduce the influence on the linear structure.…”

Section: Methodsmentioning

confidence: 99%

“…Finally, based on the stability of each cluster, the application of linear structure was further investigated [ 18 ]. Unlike accidental discoveries in reference [ 19 , 20 ], the regular formation could be realized, which lays a good foundation for the development of high-density storage ultrathin film [ 20 , 21 , 22 ].…”

Section: Introductionmentioning

confidence: 99%

Study on Formation Process and Models of Linear Fe Cluster Structure on a Si(111)-7 × 7-CH3OH Surface

Ding

et al. 2018

Materials

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STM results showed that Fe atoms were deposited on a Si(111)-7 × 7 reconstructed surface, which was saturated with CH3OH molecules. Fe atomic linear structure was composed of stable clusters and in-situ observed by the scanning tunneling microscopy (STM). The aim to improve its application of magnetic memory material, both formation process and models, has been explored in this paper. By combining surface images and mass spectrometer data, an intermediate layer model was established. In terms of thermal stability, the most favorable adsorption sites of CH3OH were further explored. After that, Fe atoms were deposited on the Si(111)-7 × 7-CH3OH surface, forming a linear cluster structure. On the one hand, a new Fe cluster model was put forward in this paper, which was established with height measurement and 3D surface display technology. This model is also affected by the evaporation temperature, which can be consistent with the atomic stacking pattern of face centered cubic structures. On the other hand, the slight height change suggested the stability of linear structures. Even in the condition of thin air introduction, Fe cluster showed a good performance, which suggested the possibility of magnetic memory application in the future. These investigations are believed to have, to a certain extent, increased the probability of forming Fe linear clusters on the surface of silicon substrate, especially according to the models and surface technology we adjusted.

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“…The most advanced results have been sofar obtained with the surface magic clusters of group-III metals (Al, Ga, and In) [2][3][4][5][6] and some other metals (e.g., Na, Pb, and Cu) [7][8][9][10] on crystalline Si surfaces (mainly, on Si(1 1 1)7 Â 7 surface). For these cluster arrays, a number of the profound results have recently been obtained, including elucidation of their specific electronic properties [8,[11][12][13][14][15] foundation of their pronounced catalytic activity [16], finding the possibilities to modify composition, structure and properties of the clusters [17][18][19], demonstrating the prospects of the cluster as a prototype of the atomic-scale device [20].…”

Section: Introductionmentioning

confidence: 99%