“…For example, the values of p ox range from 2 · 10 À8 mbar [14] up to 4 · 10 À6 mbar [1], T ann is between 1000 K [15] and 2000 K [6,8,12], and T f is anywhere between 2000 K [2,3,12] and 3000 K [6]. Although several criteria have been proposed as indicators of a high surface quality, such as the sharpness and low background intensity in low-energy electron diffraction (LEED) [3,17,22], the absence of C-related peaks in Auger electron (AES) or X-ray photo-emission spectra (XPS) [14,17,19], the absence of H-specific peaks in electron-energy loss spectra (EELS) [14,19], or the intensity of an occupied surface resonance at 1.4 eV below the Fermi level in photo-emission spectra (PES) [23,18], it remains unclear under which conditions the best W(1 1 0) surface quality can be obtained. While keeping the duration of annealing d fixed at about 30 min we have experimentally studied the topography and electronic properties of W(1 1 0) surfaces in dependence of the oxygen pressure p ox during annealing by means of scanning tunneling microscopy (STM) and spectroscopy (STS).…”