Photoemission Studies of Kondo Lattice Compounds YbNi3(Ga1−xAlx)9

Utsumi, Yuki; Sato, Hitoshi; Nagata, H.; Kodama, Junichi; Ohara, Shuichi; Yamashita, Tetsuro; Mimura, Koji; Motonami, Satoru; Arita, Masashi; Ueda, Shigenori; Shimada, Kenya; Namatame, H.; Takeuchi, Masaki

doi:10.7566/jpscp.1.012117

Cited by 3 publications

(1 citation statement)

References 16 publications

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“…With decreasing temperature, the energy position of the peak becomes closer to E F and the intensity becomes higher. The peak with similar temperature dependence has also been observed in YbCdCu 4 [11] and YbNi 3 Ga 9 [12]. Based on these results, the peak near E F is ascribed to the Kondo resonance peak.…”

Section: Resultssupporting

confidence: 59%

Photoemission study on YbZn_1-xSn_xCu₄

Sato

Utsumi

Kodama

et al. 2015

J. Phys.: Conf. Ser.

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Abstract. We have investigated the electronic structure of YbZn1−xSnxCu4 with x = 0.5 by means of hard x-ray photoemission spectroscopy (HAXPES) with hν = 5.95 keV and low photon energy photoemission spectroscopy (LEPES) with hν = 14 eV. The Yb valence derived from the Yb 3d HAXPES spectrum remarkably decreases between 100 and 20 K; ∼ 2.90 at 300 − 100 K and 2.78 at 20 K. The LEPES spectra exhibit a prominent peak near the Fermi level which is attributed to the Kondo resonance peak. The Kondo temperature is estimated to be TK ∼ 210 K from an energy position of the peak extrapolated to zero temperature. IntroductionA family of YbXCu 4 (X = In, Cd, Ag, Au, Cu, Zn etc.) with the cubic AuBe 5 -type structure exhibits a wide variety of physical properties [1]. Among them, YbInCu 4 undergoes the firstorder valence transition at T V = 42 K [2]. The Yb valences are estimated to be 2.90 and 2.74 in the high-and low-temperature phases, respectively, from hard x-ray photoemission spectroscopy (HAXPES) with hν = 5.95 keV for the Yb 3d core states [3]. The magnetic susceptibility is the Curie-Weiss type above T V and the Pauli paramagnetic type below T V . The Kondo temperature T K also changes from T K+ ∼ 25 K to T K− ∼ 400 K [4]. Reflecting the high T K− , the Kondo resonance peak suddenly appears below T V in the low photon energy photoemission spectra (LEPES spectra) with hν = 7 eV at binding energy of E B = 47 meV relative to the Fermi level (E F ) [5].Among YbXCu 4 , only YbInCu 4 exhibits the valence transition. The transition is expected to be controlled by the conduction-band electronic structure depending on X. Considering the nominal valence electrons of Zn (4s 2 4p 0 ), In (5s 2 5p 1 ) and Sn (5s 2 5p 2 ), the conduction-band electronic structure of the solid solution YbZn 1−x Sn x Cu 4 with x = 0.5 is considered to be similar to that of YbInCu 4 and the valence transition is expected. In this paper, we report the HAXPES (hν = 5.95 keV) and LEPES (hν = 14 eV) results on YbZn 0.5 Sn 0.5 Cu 4 . A remarkable decrease of the Yb valence was found below 100 K, though the sharp valence transition was not

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Section: Resultssupporting

confidence: 59%

Photoemission study on YbZn_1-xSn_xCu₄

Sato

Utsumi

Kodama

et al. 2015

J. Phys.: Conf. Ser.

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Hard x-ray photoemission study of Yb_1−xZr_xB₁₂: the effects of electron doping on the Kondo insulator YbB₁₂

Rousuli

Sato

Iga

et al. 2017

J. Phys.: Condens. Matter

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We have carried out hard x-ray photoemission spectroscopy (HAXPES) of Yb Zr B ([Formula: see text]) to study the effects of electron doping on the Kondo insulator YbB. The Yb valences of Yb Zr B at 300 K estimated from the Yb 3d HAXPES spectra decreased after substituting Yb with Zr from 2.93 for YbB to 2.83 for YbZrB. A temperature dependent valence decrease was found upon cooling for all doping concentrations. We found peak shifts of the B 1s and Zr 3d, and Yb 4f spectra toward the deeper binding-energy with increasing Zr concentration, which indicates a shift of the Fermi level to the higher energy and that of the Yb 4f hole level close to the Fermi level, respectively, due to electron doping. These results qualitatively show the enhanced hybridization between the Yb 4f and conduction-band states with Zr substitution, consistent with magnetic susceptibility measurements.

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Electronic Structure of Yb(Ni₁₋_xCo_x)₃Ga₉ Studied by Angle-resolved Photoelectron Spectroscopy

et al. 2020

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Photoemission Studies of Kondo Lattice Compounds YbNi₃(Ga₁₋_xAl_x)₉

Cited by 3 publications

References 16 publications

Photoemission study on YbZn_1-xSn_xCu₄

Photoemission study on YbZn_1-xSn_xCu₄

Hard x-ray photoemission study of Yb_1−xZr_xB₁₂: the effects of electron doping on the Kondo insulator YbB₁₂

Electronic Structure of Yb(Ni₁₋_xCo_x)₃Ga₉ Studied by Angle-resolved Photoelectron Spectroscopy

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Photoemission Studies of Kondo Lattice Compounds YbNi3(Ga1−xAlx)9

Cited by 3 publications

References 16 publications

Photoemission study on YbZn1-xSnxCu4

Photoemission study on YbZn1-xSnxCu4

Hard x-ray photoemission study of Yb1−xZrxB12: the effects of electron doping on the Kondo insulator YbB12

Electronic Structure of Yb(Ni1−xCox)3Ga9 Studied by Angle-resolved Photoelectron Spectroscopy

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Photoemission Studies of Kondo Lattice Compounds YbNi₃(Ga₁₋_xAl_x)₉

Photoemission study on YbZn_1-xSn_xCu₄

Photoemission study on YbZn_1-xSn_xCu₄

Hard x-ray photoemission study of Yb_1−xZr_xB₁₂: the effects of electron doping on the Kondo insulator YbB₁₂

Electronic Structure of Yb(Ni₁₋_xCo_x)₃Ga₉ Studied by Angle-resolved Photoelectron Spectroscopy