Photoemission studies of the surfactant-aided growth of Ge on Te-terminated Si(100)

Bennett, Mark; Dunscombe, C.; Cafolla, A.A.; Cairns, J. W.; MacDonald, John Emyr; Williams, R. H.

doi:10.1016/s0039-6028(96)01149-1

Cited by 18 publications

(14 citation statements)

References 16 publications

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“…Similarly, the epitaxial growth of Ge on the Si(0 0 1) surface falls in the same category, where, after the first few layers of Ge, the subsequent growth is in the form of 3D islands. However, thick layers of Ge can be grown layer-by-layer on Si by introducing a monolayer or submonolayer of a surfactant like As [1][2][3], Sb [4,5] or Te [6][7][8]. Such layer-by-layer homoepitaxial growth of Si crystals can also be achieved by introducing Te surfactants on the Si(0 0 1) surface.…”

Section: Introductionmentioning

confidence: 99%

Finite temperature studies of Te adsorption on

Sen¹,

Çiraci²,

Batra³

et al. 2002

Surface Science

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We perform first principles density functional calculations to investigate the adsorption of Te on the Si(0 0 1) surface from low coverage up to a monolayer coverage. At low coverage, a Te atom is adsorbed on top of the Si surface dimer bond. At higher coverages, Te atoms adsorption causes the Si-Si dimer bond to break, lifting the (2 Â 1) reconstruction. We find no evidence of the Te-Te dimer bond formation as a possible source of the (2 Â 1) reconstruction at a monolayer coverage. Finite temperature ab initio molecular dynamics calculations show that Te covered Si(0 0 1) surfaces do not have any definitive reconstruction. Vibrations of the bridged Te atoms in the strongly anharmonic potentials prevent the reconstruction structure from attaining any permanent, two-dimensional periodic geometry. This explains why experiments attempting to find a definite model for the reconstruction reached conflicting conclusions.

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Section: Introductionmentioning

confidence: 99%

Finite temperature studies of Te adsorption on

Sen¹,

Çiraci²,

Batra³

et al. 2002

Surface Science

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“…This adsorbate-induced dereconstruction has previ-ously been demonstrated for S/Ge͑001͒, 5 and, somewhat imperfectly, for Te/Si͑001͒; 6 in each case, the Group-VI element was found to adsorb in a bridge site. 7 The SME of Ge on Si͑001͒ using Te as a surfactant, [8][9][10][11][12] however, has raised additional questions about both the mechanism of the surfactant action and the structure of Te on Si͑001͒ and Ge͑001͒. Surprisingly, Te was able to act as an effective surfactant for that system down to a Te coverage of only 0.1 ML.…”

Section: Introductionmentioning

confidence: 99%

Multiple bonding configurations for Te adsorbed on the Ge(001) surface

et al. 1999

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Using high-resolution x-ray standing waves and low-energy electron diffraction, the structure of Te adsorbed on Ge͑001͒ was studied. A coverage-dependent structural rearrangement was observed between Te coverages of 1 and 0.5 monolayer ͑ML͒. At Te coverages near 1 ML, Te was found to adsorb in a bridge site, as expected. However, at Te coverages near 0.5 ML, a structure unanticipated for Group VI/Group IV adsorption was discovered. Te-Ge heterodimers were formed with an average valency of 5, allowing them to satisfy all surface dangling bonds. The results help explain the efficacy of Te as a surfactant in epitaxial growth of Ge/Si͑001͒.

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“…The morphology and the structural properties of the tellurium-silicon system have been recent subjects has been recently the subject of many experimental works 1-10 However, adsorbed structures of Te on Si 001 surface, Si 001 Te, are still subject to considerable discussion, with various unresolved claims concerning local geometry, stability, and Te i n terdi usion, such a s the use of Te as a surfactant in the growth of Ge thin lms on Si 5,6 , and the growth of high quality CdTe thin lms on Si 7 . Experimental measurements as Low Energy Electron Di raction LEED , Surface Extended X-Ray Adsorption Fine Structure SEXAFS , and Scanning Tunneling Microscopy STM , indicate that the deposition of full monolayer ML of Te atoms at room temperature leads to a 1 1 reconstruction of the surface 1,2,3,8,9 .…”

Section: Introductionmentioning

confidence: 99%

Theoretical study of Si(001)/Te - (1×1), (2×1) and (3×1) surfaces

Miwa

Ferraz

1999

Braz. J. Phys.

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The atomic geometry, c hemical bonding and energetics for full -, 2 3, 1 2 and 1 3 of a monolayer of Te c o verages on the Si 001 Te -1 1 , 2 1 , and 3 1 surfaces have been studied employing rst -principles total-energy calculations. For one monolayer coverage we nd that the 1 1 structure is energetically favourable against 2 1 structure, in agreement with experimental results, indicating that the dimerization of Te atoms is not an exothermic process. For a coverage of 2 3 of a monolayer, the formation of Te-Si-Te mixed trimers, in a 3 1 -reconstruction, is an energetically stable con guration. At 1 3 coverage, we h a ve obtained the formation of Si-Si dimers with a single Te atom, at the surface in a 3 1 -reconstruction. In this structure there is a very weak interaction between the dimer and the single Te atom.

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Photoemission studies of the surfactant-aided growth of Ge on Te-terminated Si(100)

Cited by 18 publications

References 16 publications

Finite temperature studies of Te adsorption on

Finite temperature studies of Te adsorption on

Multiple bonding configurations for Te adsorbed on the Ge(001) surface

Theoretical study of Si(001)/Te - (1×1), (2×1) and (3×1) surfaces

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