Photoemission studies of very thin (&lt;10 nm) silicon oxynitride (SiO N ) layers formed by PECVD

Hoffmann, Patrick; Schmeißer, Dieter; Beck, R. B.; Cuch, M.; Giedz, M.; Jakubowski, Andrzej

doi:10.1016/j.jallcom.2004.05.032

Cited by 6 publications

(4 citation statements)

References 11 publications

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“…Over the last decades amorphous silicon oxynitride coatings have been the subject of great interest not only due to their excellent properties such as chemical inertness, high thermal stability and corrosion resistance, but also due to their combination of adequate mechanical, optical and electrical properties [1], [2], [3], [4] and [5]. Silicon oxynitride coatings have been considered as an interesting alternative to silicon oxide coatings with improved properties as diffusion barrier for boron and phosphor [6] and low mechanical stress [1]. The dielectric constant of SiON coatings increases linearly with the amount of nitrogen in the coatings from 3.8 of SiO2 to 7.8 of Si3N4 [7].…”

Section: Introductionmentioning

confidence: 99%

Magnetron sputtered a-SiOxNy thin films: A closed porous nanostructure with controlled optical and mechanical properties

Godinho¹,

Rojas²,

Fernández³

2012

Microporous and Mesoporous Materials

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Amorphous silicon oxynitride coatings with similar composition and different closed porosity were prepared by magnetron sputtering. Pores size, shape and distribution were evaluated by scanning electron microscopy and transmission electron microscopy. Raman and EELS analysis proved that the pores are filled with molecular nitrogen trapped during deposition.The mechanical properties evaluated by nanoindentation shows that the presence of closed nano-porosity does not compromise the mechanical integrity of these coatings. The introduction of closed porosity is shown as a good strategy for obtaining lower dielectric constant silicon oxynitride coatings with similar composition while keeping the good mechanical properties (∼13 GPa) characteristic of this type of coatings. The presence of close porosity gives also a good stability of coatings properties as compared to open porosity microstructures where gas phase in contact with the coatings can affect coatings properties.

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Section: Introductionmentioning

confidence: 99%

Magnetron sputtered a-SiOxNy thin films: A closed porous nanostructure with controlled optical and mechanical properties

Godinho¹,

Rojas²,

Fernández³

2012

Microporous and Mesoporous Materials

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“…Thus, in order to improve the quality of the dielectric films in question, hightemperature annealing (usually RTA) is recommended. Annealing of the ultrathin PECVD oxynitride layers at 600 • C and 800 • C in nitrogen was studied in [21,22]. XPS studies, as well as optical and electrical characterization, have proved that the behaviour of the films is quite complex, as many effects take place simultaneously (mas-sive hydrogen outdiffusion, film densification, nitrogen substitution by oxygen, etc.).…”

Section: Deposition and Plasma Assisted Techniquesmentioning

confidence: 99%

Ultrathin oxynitride films for CMOS technology

Beck

2004

JTIT

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In this work, a review of possible methods of oxynitride film formation will be given. These are different combinations of methods applying high-temperature oxidation and nitridation, as well as ion implantation and deposition techniques. The layers obtained using these methods differ, among other aspects in: nitrogen content, its profile across the ultrathin layer, ... etc., which have considerable impact on device properties, such as leakage current, channel mobility, device stability and its reliability. Unlike high-temperature processes, which (understood as a single process step) usually do not allow the control of the nitrogen content at the silicon-oxynitride layer interface, different types of deposition techniques allow certain freedom in this respect. However, deposition techniques have been believed for many years not to be suitable for such a responsible task as the formation of gate dielectrics in MOS devices. Nowadays, this belief seems unjustified. On the contrary, these methods often allow the formation of the layers not only with a uniquely high content of nitrogen but also a very unusual nitrogen profile, both at exceptionally low temperatures. This advantage is invaluable in the times of tight restrictions imposed on the thermal budget (especially for high performance devices). Certain specific features of these methods also allow unique solutions in certain technologies (leading to simplifications of the manufacturing process and/or higher performance and reliability), such as dual gate technology for system-on-chip (SOC) manufacturing.

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“…Over last few decades, oxynitride materials have been extensively studied as potential candidates to tune mechanical, optical or electrical properties between oxide and nitride ones [1,2,3]. Among them, silicon oxynitrides present a great interest for numerous applications, such as an intermediate dielectric constant for microelectronic [4] or a diffusion barrier for boron, phosphor [5] and also for gas [6,7]. More recently, they are increasingly used as antireflective coatings and passivation layers to improve efficiency of solar cell [8,9,10].…”

Section: Introductionmentioning

confidence: 99%

Reactive gas pulsing sputtering process, a promising technique to elaborate silicon oxynitride multilayer nanometric antireflective coatings

Farhaoui¹,

Bousquet²,

Smaâli³

et al. 2016

J. Phys. D: Appl. Phys.

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HAL is a multi-disciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

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Photoemission studies of very thin (<10 nm) silicon oxynitride (SiO N ) layers formed by PECVD

Cited by 6 publications

References 11 publications

Magnetron sputtered a-SiOxNy thin films: A closed porous nanostructure with controlled optical and mechanical properties

Magnetron sputtered a-SiOxNy thin films: A closed porous nanostructure with controlled optical and mechanical properties

Ultrathin oxynitride films for CMOS technology

Reactive gas pulsing sputtering process, a promising technique to elaborate silicon oxynitride multilayer nanometric antireflective coatings

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