Photoemission study of ammonia dissociation on Si(100) below 700 K

Hlil, E. K.; Kübler, L.; Bischoff, J.L.; Bolmont, D.

doi:10.1103/physrevb.35.5913

Cited by 121 publications

(62 citation statements)

References 15 publications

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“…At -770 K, the 398.7 eV peak nearly disappeared while the peak intensity at 397.2 eV was further enhanced. The latter peak, also observed for Si-N species on different Si surfaces [14], confirmed the cracking of the N-N bond as well as further cracking of NHx species. These results are also consistent with our HREELS and UPS studies over the same temperature range.…”

Section: N 2 H 4 /Sisupporting

confidence: 71%

“…Therefore, this peak which is slightly higher in B.E. as compared to those of NH (398.5 eV) or NH 2 (398.8 eV) species on Si surfaces [11,14], is assigned mostly to the presence of N2Hx (x=2,3); however, partial contribution due to NHx (x=1,2) species formed from the cleavage of the N-N bond cannot be ruled out.…”

Section: N 2 H 4 /Simentioning

confidence: 91%

“…However, other than for macroscale information, very little has been published about these potential nitridants regarding the reaction mechanism under various conditions of submonolayer coverage and temperature. Thus, considering the fundamental and technological nature of such processing and the recently increased interests in the Sinitridation process [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21], a more thorough investigation is important and necessary.…”

Section: Introductionmentioning

confidence: 99%

“…In view of the limited available information on the use of hydrazine or its alkyl derivatives in Si-nitridation and in order to compare the present reaction mechanism investigation, it is worthy to consider a number of other surface studies on Sinitridation using various nitridants; these include the interaction of NH 3 with porous Si [5], NH 3 on Si(111) [6][7][8][9][10][11] and Si(100) [12][13][14][15], N 2 + on Si(111) [16], N on Si(111) [11,171 and Si(100) [11], NO on Si(111) [9,10,18] and Si(100) [19], and, more recently, HN 3 on Si(110) [20] and Si(111) [21].…”

Section: Introductionmentioning

confidence: 99%

“…Briefly, in the above cases of H-containing nitridants [5][6][7][8][9][10][11][12][13][14][15]20,21), it is generally agreed that H-adatoms passivate the Si surface at temperatures below -800 K following dissociative adsorption; above this temperature, desorption of H takes place with the resulting formation of a variety of proposed SixNy structures beginning with a near planar or deformed planar Si 3 N [17,18]. For the other nitridants, a similar SiN structure has been proposed to form on the Si surface in the 600-800 K temperature range.…”

Section: Introductionmentioning

confidence: 99%

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The Adsorption and Thermal Composition of N2H4 and CH3N2H3 on Si(111)- 7x7

Bu¹,

Shinn²,

Lin³

1991

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The adsorption and thermal decomposition of N 2 H 4 and CH 3 N 2 H 3 on Si(111)-7x7 were investigated using XPS, UPS and HREELS in the 120-1350 K surface temperature range. Both molecules were partially dissociated into N 2 Hx or CH 3 N 2 Hx (x=2,3) species with the N-N bond parallel or nearly parallel to the surface as they adsorbed on the surface at 120 K, especially at lower dosages (e.g., < 0.2 L) and more so for N 2 H 4 than CH 3 N 2 H 3 . This was evidenced by the appearance of the Si-H vibration at 255 meV in the HREEL spectra and by the relatively larger FWHMs of the Nls XPS and the n+,n-molecular UPS peaks. When a -0.4 L N 2 H 4 or CH 3 N 2 H 3 dosed sample was annealed to -500 K, significant desorption of the molecules occurred as well as further dissociation of the N-H bonds. Above -600 K, the N-N bond began to break leading to the formation of NHx (x=1,2) species for both

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Section: N 2 H 4 /Sisupporting

confidence: 71%

Section: N 2 H 4 /Simentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

The Adsorption and Thermal Composition of N2H4 and CH3N2H3 on Si(111)- 7x7

Bu¹,

Shinn²,

Lin³

1991

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Ammonia as a precursor in electron-enhanced nitridation of Si(100)

Bater

Sanders

Craig

2000

Surf. Interface Anal.

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Electron beam‐enhanced nitridation of Si(100) using ammonia as a precursor at 110 K was studied with electron‐stimulated desorption, XPS, AES and high‐resolution electron energy‐loss spectroscopy (HREELS). Hydrogen ion kinetic energy distributions from adsorbed ammonia exhibited a component from NH3(a) at 7.8 eV, from NH2(a) at 5.4 eV and from H(a) at 4 eV. Formation of the nitride following electron beam irradiation of adsorbed ammonia was shown by both N 1s at 398 eV and Si 2p at 102 eV in XPS spectra. From HREELS spectra following electron beam irradiation, we are able to show that the electron beam is highly effective in removal of hydrogen from NHx(a) (x = 3,2) and from the silicon surface. Electron‐stimulated desorption of adsorbed hydrogen and dissociation of adsorbed NHx (x = 3,2) are believed to be responsible for enhanced nitridation. Nitride can also form on the surface by irradiating the surface in an ammonia environment at 110 K. A nitride growth rate of 1 Å min−1 was obtained from the bulk Si LVV AES signal intensity attenuation. Copyright © 2000 John Wiley & Sons, Ltd.

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UPS of multilayer nitrogen‐bearing compounds on the Si(100) surface

Bush

Craig

Roos

et al. 2008

Surface & Interface Analysis

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Ultraviolet photoemission spectra (UPS) are presented for condensed layers of three ethylated amines; mono-, di-, and triethylamine (TEA) on the Si(100) surface at 100 K. The photoemission peaks associated with the nitrogen lone pair electrons are identified in the amines and compared with the corresponding spectra for condensed ammonia. Shifts in the lone pair binding energy for the ethyl-substituted amines are shown to be consistent with conventional chemical paradigms. Also, for comparison purposes spectra for two nonethylated amines, trimethylamine (TMA), and its silicon analog, trisilylamine (TSA), are presented and discussed.

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Photoemission study of ammonia dissociation on Si(100) below 700 K

Cited by 121 publications

References 15 publications

The Adsorption and Thermal Composition of N2H4 and CH3N2H3 on Si(111)- 7x7

The Adsorption and Thermal Composition of N2H4 and CH3N2H3 on Si(111)- 7x7

Ammonia as a precursor in electron-enhanced nitridation of Si(100)

UPS of multilayer nitrogen‐bearing compounds on the Si(100) surface

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