Photoemission study on the Sb-induced reconstruction of the Si(112) surface

Cho, E.S.; Kim, M.K.; Park, J.W.; Hur, Hoon; Jeon, Cheolho; Baik, Jaeyoon; Hwang, Choongyu; Kang, Tai‐Hee; Kim, B.; An, Ki‐Seok; Park, C.-Y.; Lee, S.B.

doi:10.1016/j.susc.2005.06.017

Cited by 4 publications

(1 citation statement)

References 31 publications

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“…This unique faceting results from the low free energy of a single unit cell of the Si(111) (7 × 7) reconstruction combined with the stability of reconstructed Si(337). Substantial rearrangements in Si(112) nanofaceting were observed upon exposure to a fraction of monolayer of various metals. − In the following, we elucidate the interaction of Al atoms with the Si(112) surface and its implication for the morphology of the Al−SiNW sidewall surface. Toward this end, we used spot-profile-analyzing low-energy electron diffraction (SPA-LEED) , to probe in situ the faint changes in the structural characteristics of clean Si(112) surface exposed to Al atoms (see Methods).…”

Section: Resultsmentioning

confidence: 99%

Atomically Smooth p-Doped Silicon Nanowires Catalyzed by Aluminum at Low Temperature

et al. 2011

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Silicon nanowires (SiNWs) are powerful nanotechnological building blocks. To date, a variety of metals have been used to synthesize high-density epitaxial SiNWs through metal-catalyzed vapor phase epitaxy. Understanding the impact of the catalyst on the intrinsic properties of SiNWs is critical for precise manipulation of the emerging SiNW-based devices. Here we demonstrate that SiNWs synthesized at low-temperature by ultrahigh vacuum chemical vapor deposition using Al as a catalyst present distinct morphological properties. In particular, these nanowires are atomically smooth in contrast to rough {112}-type sidewalls characteristic of the intensively investigated Au-catalyzed SiNWs. We show that the stabilizing effect of Al plays the key role in the observed nanowire surface morphology. In fact, unlike Au which induces (111) and (113) facets on the nanowire sidewall surface, Al revokes the reconstruction along the [112] direction leading to equivalent adjacent step edges and flat surfaces. Our finding sets the lower limit of the Al surface density on the nanowire sidewalls at ∼2 atom/nm(2). Additionally, despite using temperatures of ca. 110-170 K below the eutectic point, we found that the incorporation of Al into the growing nanowires is sufficient to induce an effective p-type doping of SiNWs. These results demonstrate that the catalyst plays a crucial role is shaping the structural and electrical properties of SiNWs.

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