Photoetching and modification of organic polymer surfaces with vacuum UV radiation

Takacs, G. A.; Vukanović, V.; Tracy, D.; Chen, J.X.; Egitto, Frank D.; Matienzo, Luis J.; Emmi, F.

doi:10.1016/0141-3910(93)90193-m

Cited by 22 publications

(4 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On moving to heavier noble gas atoms, the observed trend in the level of surface roughening for polysulfone is contrary to what might be expected in terms of a direct energy transfer viewpoint 34 (Table 111). However it is consistent with the radiative energy transfer model, 32335* 36 since the M I resonance lines becomes less energetic on descending the inert gas series, which in turn will result in lower photochemical ablation. In the case of the heavier noble gas atoms, momentum transfer effects will be expected to make a more significant contribution towards surface roughness.…”

Section: Discussionsupporting

confidence: 63%

XPS and atomic force microscopy of plasma‐treated polysulfone

Hopkins

Badyal

1996

J. Polym. Sci. A Polym. Chem.

View full text Add to dashboard Cite

Section: Discussionsupporting

confidence: 63%

XPS and atomic force microscopy of plasma‐treated polysulfone

Hopkins

Badyal

1996

J. Polym. Sci. A Polym. Chem.

View full text Add to dashboard Cite

“…Sorokin and Blank reported that PTFE is highly transparent at wavelengths greater than 140 nm (14). This is consistent with observations of Egitto and Matienzo (75), Takacs et al, (16) and Egitto and Davis (77).…”

Section: Resultssupporting

confidence: 85%

Enhanced Processing of Poly(tetrafluoroethylene) for Microelectronics Applications

Davis

Egitto

1993

ACS Symposium Series

View full text Add to dashboard Cite

Polymers having low-dielectric constants (ε r ) are of strategic importance to the electronics industry since this physical property largely determines a device's overall signal speed and wiring density (1). In general, a lower value of ε r allows higher wiring density and greater signal speeds. Although Teflon ® -type fluo ropolymers, such as poly(tetrafluoroethylene) (PTFE), offer the lowest dielectric constant values (ε r = 2.1) of commercially available materials, they have not been viewed as attractive candidates for microelectronic applications. This is due in part to processing difficulties, e.g., generation of high resolution features (µm range).One means of microstructuring materials is by laser ablation. Kawamura, et al.(2) and Srinivasan and Mayne-Banton (3) were first to identify the use of high-energy ultra-violet (UV) excimer laser radiation to photo-ablate polymers. These early investigations were performed using materials that inherently ab sorbed radiation at the wavelength studied. For instance, ablation of polyethyl ene terepthalate) (PET) (1) and poly(methyl methacrylate) (PMMA) (2) was investigated at 193 nm. Subsequent work included ablation of materials which absorbed at longer wavelengths, such as polyimide at 308 nm (3-6).Not all polymers have the requisite chemical functionality in their molecular structure to inherently absorb the high-energy UV photons as required for excimer laser ablation. For instance, PMMA and PTFE are not readily struc tured at 308 nm. However, several researchers have reported successful excimer ablation of UV-transparent materials using a technique known as "doping" (7-11). In these investigations, a low-molecular weight, highly conjugated or ganic compound that absorbs strongly at the excimer laser wavelength of interest is incorporated into the non-absorbing host matrix. These studies have been limited to polymers and dopants that have similar solubility charactecteristics, for example, PMMA doped with pyrene using 308 nm exposure (9).

show abstract

“…The emission of radiations with short wavelengths, more and more mentioned in the literature, − as an important agent of polymer chemical modification depends strongly on gas nature, in the order H 2 plasma > N 2 plasma > O 2 plasma > He plasma . Different polypropylene films were treated in H 2 , N 2 , O 2 , and He plasmas under conditions b.…”

Section: Discussionmentioning

confidence: 99%

Cold Plasma Treatment: Surface or Bulk Modification of Polymer Films?

1997

View full text Add to dashboard Cite

Reactive species of nitrogen cold plasma could interact with a polymeric surface, leading to an important surface functionalization (mostly as amino group attachment) and consequently to a surface having a Lewis base character. Under certain conditions, the surface functionalization is not the only modification; a morphologic transformation is also noticed. The virgin isotactic polypropylene is composed in bulk of smectic and amorphous phases in the same proportions, and after the plasma treatment a more organized monoclinic α phase appears. During the plasma treatment, two types of crystallization take place, smectic phase → α phase and also amorphous → smectic phase, their respective proportions varying in the thickness of the film. This phenomenon could be explained by an absorption of the plasma VUV radiations by the polymer film. Illustration is given with different plasmas for which the VUV emission is important.

show abstract

Photoetching and modification of organic polymer surfaces with vacuum UV radiation

Cited by 22 publications

References 29 publications

XPS and atomic force microscopy of plasma‐treated polysulfone

XPS and atomic force microscopy of plasma‐treated polysulfone

Enhanced Processing of Poly(tetrafluoroethylene) for Microelectronics Applications

Cold Plasma Treatment: Surface or Bulk Modification of Polymer Films?

Contact Info

Product

Resources

About