In
this work, we report a new methodology for nonadiabatic molecular
dynamics calculations within the extended tight-binding (xTB) framework.
We demonstrate the applicability of the developed approach to finite
and periodic systems with thousands of atoms by modeling “hot”
electron relaxation dynamics in silicon nanocrystals and electron–hole
recombination in both a graphitic carbon nitride monolayer and a titanium-based
metal–organic framework (MOF). This work reports the nonadiabatic
dynamic simulations in the largest Si nanocrystals studied so far
by the xTB framework, with diameters up to 3.5 nm. For silicon nanocrystals,
we find a non-monotonic dependence of “hot” electron
relaxation rates on the nanocrystal size, in agreement with available
experimental reports. We rationalize this relationship by a combination
of decreasing nonadiabatic couplings related to system size and the
increase of available coherent transfer pathways in systems with higher
densities of states. We emphasize the importance of proper treatment
of coherences for obtaining such non-monotonic dependences. We characterize
the electron–hole recombination dynamics in the graphitic carbon
nitride monolayer and the Ti-containing MOF. We demonstrate the importance
of spin-adaptation and proper sampling of surface hopping trajectories
in modeling such processes. We also assess several trajectory surface
hopping schemes and highlight their distinct qualitative behavior
in modeling the excited-state dynamics in superexchange-like models
depending on how they handle coherences between nearly parallel states.