Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-effect transistors

Karch, J.; Tarasenko, S. A.; Ivchenko, E. L.; Kamann, Josef; Olbrich, P.; Utz, Martin; Квон, З. Д.; Ganichev, Sergey

doi:10.1103/physrevb.83.121312

Cited by 36 publications

(24 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…liking a battery. Recent experimental demonstrations of PGE include using silicon nanowires 7 and Si MOSFETs 8,9 , where inversion symmetry was broken by geometry of the device.…”

Section: Introductionmentioning

confidence: 99%

Two-Dimensional Photogalvanic Spin-Battery

Xie

Chen

et al. 2018

Phys. Rev. Applied

View full text Add to dashboard Cite

Pure spin-current is of central importance in spintronics. Here we propose a two-dimensional (2D) spinbattery system that delivers pure spin-current without an accompanying charge-current to the outside world at zero bias. The principle of the spin-battery roots in the photogalvanic effect (PGE), and the system has good operational stability against structural perturbation, photon energy and other materials detail. The device principle is numerically implemented in the 2D material phosphorene as an example, and first principles calculations give excellent qualitative agreement with the PGE physics. The 2D spin-battery is interesting as it is both a device that generates pure spin-currents, also an energy source that harvests photons. Given the versatile operational space, the spin-battery should be experimentally feasible. 72.15.Gd, 71.15.Mb NOTE: This article has been published in Physical Review Applied in a revised form (

show abstract

“…liking a battery. Recent experimental demonstrations of PGE include using silicon nanowires 7 and Si MOSFETs 8,9 , where inversion symmetry was broken by geometry of the device.…”

Section: Introductionmentioning

confidence: 99%

Two-Dimensional Photogalvanic Spin-Battery

Xie

Chen

et al. 2018

Phys. Rev. Applied

View full text Add to dashboard Cite

show abstract

“…We note that the current, which is perpendicular to the incident direction of the light, should be defined as a pure valley-polarized current without the need to consider the SOC. 9,10,34,35 Once SOC is introduced, the spin degeneracy will be removed, and the transition amplitude of electrons with opposite spins will become different. The photocurrent then becomes a partially spin-polarized photocurrent based on the valley polarized current (discussed in detail in SI), which gives us the intrinsic nature of the observed spin-coupled valley photocurrent.…”

mentioning

confidence: 99%

Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2

et al. 2014

View full text Add to dashboard Cite

The valley degree of freedom in layered transition-metal dichalcogenides provides an opportunity to extend the functionalities of spintronics and valleytronics devices. The achievement of spin-coupled valley polarization induced by the non-equilibrium charge-carrier imbalance between two degenerate and inequivalent valleys has been demonstrated theoretically and by optical experiments. However, the generation of a valley and spin current with the valley polarization in transition-metal dichalcogenides remains elusive. Here we demonstrate a spin-coupled valley photocurrent, within an electric-double-layer transistor based on WSe2, whose direction and magnitude depend on the degree of circular polarization of the incident radiation and can be further modulated with an external electric field. This room-temperature generation and electric control of a valley and spin photocurrent provides a new property of electrons in transition-metal dichalcogenide systems, and thereby enables additional degrees of control for quantum-confined spintronic devices.

show abstract

“…In Si/Ge QWs, CPGE due to orbital (6,7) or valley-orbital interactions (8), appears in the long wavelength range (~100 μm). The underlying mechanism is attributed to intra-subband free carrier absorption pathways interfering with inter-subband excitation (6), via polarizability effects.…”

mentioning

confidence: 99%

Voltage-tunable circular photogalvanic effect in silicon nanowires

Dhara

Mele

Agarwal

2015

Science

View full text Add to dashboard Cite

Electronic bands in crystals can support nontrivial topological textures arising from spin-orbit interactions, but purely orbital mechanisms can realize closely related dynamics without breaking spin degeneracies, opening up applications in materials containing only light elements. One such application is the circular photogalvanic effect (CPGE), which is the generation of photocurrents whose magnitude and polarity depend on the chirality of optical excitation. We show that the CPGE can arise from interband transitions at the metal contacts to silicon nanowires, where inversion symmetry is locally broken by an electric field. Bias voltage that modulates this field further controls the sign and magnitude of the CPGE. The generation of chirality-dependent photocurrents in silicon with a purely orbital-based mechanism will enable new functionalities in silicon that can be integrated with conventional electronics.

show abstract

Photoexcitation of valley-orbit currents in (111)-oriented silicon metal-oxide-semiconductor field-effect transistors

Cited by 36 publications

References 24 publications

Two-Dimensional Photogalvanic Spin-Battery

Two-Dimensional Photogalvanic Spin-Battery

Generation and electric control of spin–valley-coupled circular photogalvanic current in WSe2

Voltage-tunable circular photogalvanic effect in silicon nanowires

Contact Info

Product

Resources

About