Photoinduced Effects in Chalcogenide Glasses and Their Application for Optical Recording

Kikineshi, A. A.; Mishak, Alexander

doi:10.1007/978-94-011-5496-3_18

Cited by 6 publications

(8 citation statements)

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“…The error was within ±0.015 eV. The blue-shift in our as-deposited AMLs can be connected with quantum-confinement effects [3,4]. Furthermore it is expected that with decreasing thickness of the "valley" layers, and/or with the appearance and growth of transition layers of mixed composition during interdiffusion, further ∆E g shift (0.05/0.1 eV) and further bleaching of the AML will be observed.…”

mentioning

confidence: 86%

“…Compositionally modulated multilayers are attractive for these purposes because of the rather simple technology and modeling of physical processes. Amorphous multilayers (AML) are of special interest due to the elimination of the misfit problems, but the explanation of some physical effects, for example quantum confinement, blue shift of the absorption edge, diffusion on nano-scale are rather indefinite up today [3,4]. Investigations of the well-known photo-stimulated structural transformations (PST) in amorphous chalcogenide semiconductor films [5,6] were extended to the nanolayered systems [4,7] and gave a new insight to the mechanism of light-stimulated structural transformations within sensitive amorphous sub-layers of AML.…”

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confidence: 99%

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Stimulated structural transformations in amorphous semiconductor multilayers

Beke

Csík

Kökényesi

et al. 2003

phys. stat. sol. (c)

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PACS 42.70.Ln, 68.65.Ac Structural transformations, stimulated by illumination or heating are related to the interdiffusion processes in nanolayered structures, which were prepared by cyclic thermal evaporation or magnetron sputtering from Si, Ge, Se semiconductors and some As 2 S 3 , Se x Te 1-x -type chalcogenide glasses. It is shown that the intermixing velocity and the related changes of optical parameters depend on the period of the multilayer and intensity of illumination. Volume extension can be stimulated at the illuminated regions and used for the surface relief formation.Introduction The nano-scale technologies provide new possibilities of creating materials and devices with peculiar characteristics for micro-and optoelectronics. Stability of nanostructured systems strongly depends on the interdiffusion processes, which in turn can be used for solid-state synthesis of multicomponent materials, optical recording [1,2]. Compositionally modulated multilayers are attractive for these purposes because of the rather simple technology and modeling of physical processes. Amorphous multilayers (AML) are of special interest due to the elimination of the misfit problems, but the explanation of some physical effects, for example quantum confinement, blue shift of the absorption edge, diffusion on nano-scale are rather indefinite up today [3,4]. Investigations of the well-known photo-stimulated structural transformations (PST) in amorphous chalcogenide semiconductor films [5,6] were extended to the nanolayered systems [4,7] and gave a new insight to the mechanism of light-stimulated structural transformations within sensitive amorphous sub-layers of AML. Light-stimulated interdiffusion processes are possible in Si, Ge as well as in Se and chalcogenide-glass containing AML [8]. These can be used for amplitude-phase optical recording due to the changes of optical transmission, reflection and refraction index in the illuminated region of the AML. Surface reliefs also can be produced due to the deviation from Vegard's law in intermixed systems [1,8]. Stimulated intermixing depends on the temperature and the intensity of illumination, which also can heat up the layer. A model of surface relief formation due to the interdiffusion and the influence of illumination intensity on the amplitude recording process in three typical AMLs (a-Se/As 2 S 3 , As 6 Se 94 /Se 80 Te 20 , a-Si/Ge) are discussed in this paper.

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mentioning

confidence: 86%

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confidence: 99%

Stimulated structural transformations in amorphous semiconductor multilayers

Beke

Csík

Kökényesi

et al. 2003

phys. stat. sol. (c)

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“…1,2 Although the misfit problems in amorphous multilayers ͑AMLs͒ are considerably reduced compared to crystalline superlattices, there are still some physical processes ͑e.g., quantum confinement, diffu-sion͒ that are not well understood. [3][4][5] Among AMLs, chalcogenide multilayers are attractive because of the prominent photoinduced effects. Studies in chalcogenide AML have been directed towards two phenomena.…”

Section: Introductionmentioning

confidence: 99%

“…One of them is photoinduced diffusion in short period multilayer systems, which finds potential applications in holographic recording and fabrication of phase gratings. 2,6 The other is photodarkening or bleaching, 4,[7][8][9][10] which is also known in thick films. 8,11 Studies on nanostructured chalcogenides are still in the infant stage.…”

Section: Introductionmentioning

confidence: 99%

“…Earlier reports showed that there is an increase in the band gap up to 0.05 eV in as-prepared chalcogenide AMLs in comparison with thick films and an additional increase is caused by heat treatment or light irradiation. 4,22,23 Increase in the band gap of the irradiated films is assumed to occur because of the intermixing of adjacent sublayers due to interdiffusion. We irradiated the earlier samples and took the PL to understand the changes of defects and energy spectrum of the compositionally modulated nanostructures.…”

Section: Introductionmentioning

confidence: 99%

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Enhancement of photoluminescence intensity by photoinduced interdiffusion in nanolayered a-Se∕As2S3 films

Adarsh

Sangunni

Kökényesi

et al. 2005

Journal of Applied Physics

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Optical parameters of chalcogenide glass multilayers with 12-15 nm modulation lengths prepared by thermal evaporation can be changed by laser irradiation. Photoluminescence ͑PL͒ studies were carried out on such nonirradiated and irradiated multilayered samples of a-Se/ As 2 S 3 ͑sublayer thickness of a-Se is 4-5 nm for one set of samples and 1-2 nm for the other set. However As 2 S 3 sublayer thickness is 11-12 nm for both sets of samples.͒ PL intensity can be increased by several orders of magnitude by reducing the Se well layer ͑lower band gap͒ thickness and can be further increased by irradiating the samples with appropriate wavelengths in the range of the absorption edge. The broadening of luminescence bands takes place either with a decrease in Se layer thickness or with irradiation. The former is due to the change in interface roughness and defects because of the enhanced structural disorder while the latter is due to photoinduced interdiffusion. The photoinduced interdiffusion creates defects at the interface between Se and As 2 S 3 by forming an As-Se-S solid solution. From the deconvoluted PL spectrum, it is shown that the peak PL intensity, full width half maximum, and the PL quantum efficiency of particular defects giving rise to PL, can be tuned by changing the sublayer thickness or by interdiffusion.

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Polymer–chalcogenide glass nanocomposites for amplitude–phase modulated optical relief recording

Burunkova

Molnár

Ситникова

et al. 2019

J Mater Sci: Mater Electron

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The main objective of this work was to combine the positive characteristics of transparent photopolymers and light-sensitive chalcogenide glasses, with aim to improve the amplitude-phase modulation characteristics of in situ optically recorded photonic elements on the surface, and in the bulk of thick composite layer on a given substrate. The positive results were obtained due to the developed technology routes of nanocomposite (NC) fabrication by intermixing selected, optically tunable, VIS-NIR transparent and high refractive index As-S (Se) nanoparticles (NPs) produced by chemical dissolution, and acrylate monomers with initiators. Subsequent photopolymerization of such nanocomposite occurs during optical recording photonic elements and is supplemented by mass-transport processes, which enhance relief parameters. Structure, optical parameters of the new light-sensitive media and conditions of one step recording of optical elements in it were investigated.

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Photoinduced Effects in Chalcogenide Glasses and Their Application for Optical Recording

Cited by 6 publications

References 4 publications

Stimulated structural transformations in amorphous semiconductor multilayers

Stimulated structural transformations in amorphous semiconductor multilayers

Enhancement of photoluminescence intensity by photoinduced interdiffusion in nanolayered a-Se∕As2S3 films

Polymer–chalcogenide glass nanocomposites for amplitude–phase modulated optical relief recording

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