Negative differential resistance (NDR) is of considerable interest due to the uncommon characteristic of having a region where the current decreases as the applied voltage bias increases. However, it is difficult to reproduce NDR devices and evaluate their reliability and stability because of the unstable NDR behaviors. In this paper, a highly stable photo‐induced hybrid photonic (HP)‐NDR device is presented for practical applications, which has heterostructure between TiO2‐x nanorods formed by oblique angle deposition and dinaphtho[2,3‐b:2′,3′‐f]‐thieno[3,2‐b]thiophene. The mechanism of NDR behaviors is investigated through morphological analysis, energy band structure, and electrical characteristics. In addition, diverse bias stress and endurance measurements are performed to demonstrate the reliability of the HP‐NDR device. As a result, the NDR behavior lasts up to 1,000 s in each bias stress and 38,850 cycles in the repeated current–voltage (I–V) characteristics Thus, the study has successfully achieved robust HP‐NDR devices with potential for practical applications.