Photoinduced Nonvolatile Displacive Transformation and Optical Switching in MnTe Semiconductors

Mori, Shunsuke; Tanimura, Hiroshi; Ichitsubo, Tetsu; Sutou, Yuji

doi:10.1021/acsami.3c07537

Cited by 5 publications

(1 citation statement)

References 53 publications

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“…31) Moreover, our latest study demonstrated photo-induced nonvolatile polymorphic transformation with a distinct optical contrast in the MnTe film via femtosecond laser irradiation, which is also expected to contribute to the development of an ultrafast photonic memory. 37) To date, metastable β-MnTe at RT has been fabricated as sputtered as-deposited films onto substrates. Han et al investigated a deposition condition and mechanism to stabilize the β-MnTe film on a ZnTe seed layer under substrate heating.…”

Section: Introductionmentioning

confidence: 99%

Polymorphic transformation from metastable β to stable α phase in MnTe flake

Mori,

Sutou

2024

Jpn. J. Appl. Phys.

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A manganese telluride (MnTe) is an intriguing polymorphic semiconductor. Among them, the metastable β-MnTe phase, characterized by a wurtzite-type structure, has been successfully fabricated as a sputtered film on substrates. However, the bulk or free-standing β-MnTe without substrates has never been realized. In this study, we fabricated a β-MnTe flake through a lift-off process. Notably, the X-ray diffraction patterns of the flake sample approached the predicted peak positions of bulk β-MnTe, indicating strain relaxation. This represents the pioneering experimental success to demonstrate a bulk-like β-MnTe. Furthermore, we conducted thermal analyses associated with the β→α transformation through differential scanning calorimetry. The β-MnTe flake exhibited a lower transformation temperature than films, suggesting diminished thermal stability of the β phase. The enthalpy change was quantitatively determined as −45.1 kJ mol-1, which arises from the substantial volume change. These experimental demonstrations contribute to utilizing free-standing β-MnTe in optoelectronic and piezoelectric fields.

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Section: Introductionmentioning

confidence: 99%

Polymorphic transformation from metastable β to stable α phase in MnTe flake

Mori,

Sutou

2024

Jpn. J. Appl. Phys.

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Reversible Crystalline‐Crystalline Transitions in Chalcogenide Phase‐Change Materials

Liu,

Li,

Zhou

et al. 2024

Adv Funct Materials

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Phase‐change random access memory (PCRAM) is one of the most technologically mature candidates for next‐generation non‐volatile memory and is currently at the forefront of artificial intelligence and neuromorphic computing. Traditional PCRAM exploits the typical phase transition and electrical/optical contrast between non‐crystalline and crystalline states of chalcogenide phase‐change materials (PCMs). Currently, traditional PCRAM faces challenges that vastly hinder further memory optimization, for example, the high‐power consumption, significant resistance drift, and the contradictory nature between crystallization speed and thermal stability, nearly all of them are related to the non‐crystalline state of PCMs. In this respect, a reversible crystalline‐to‐crystalline phase transition can solve the above problems. This review delves into the atomic structures and switching mechanisms of the emerging atypical crystalline‐to‐crystalline transitions, and the understanding of the thermodynamic and kinetic features. Ultimately, an outlook is provided on the future opportunities that atypical all‐crystalline phase transitions offer for the development of a novel PCRAM, along with the key challenges that remain to be addressed.

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