Photoinduced Nonvolatile Resistive Switching Behavior in Oxygen-Doped MoS₂ for a Neuromorphic Vision System

Abstract

Controlling resistance by external fields provides fascinating opportunities for the development of novel devices and circuits, such as temperature-field-induced superconductors, magnetic-field-triggered giant magnetoresistance devices, and electric-field-operated flash memories. In this work, we demonstrate a light-triggered nonvolatile resistive switching behavior in oxygen-doped MoS2. The two-terminal devices exhibit stable light-modulated resistive switching characteristics and optically tunable synaptic properties with an on/off ratio of up to 104. The integrated device with crossbar architecture enables simultaneous image sensing, preprocessing, and storage in a single device, thereby increasing the training efficiency and recognition rate of image recognition tasks. This work presents a novel pathway to develop the next generation of light-controlled memory and artificial vision systems for neuromorphic computing.

Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

“…Resistive switching memory, including phase change memory , and defect-induced switching memristors, relies on various mechanisms for conductance change and information storage (Figure c). The conductance switching in these 2D memory devices is based on the imperfections in the 2D lattices.…”

“…The conductance switching in these 2D memory devices is based on the imperfections in the 2D lattices. Phase change memory based on 2D semiconductors relies on a small phase change energy between semiconducting 2H and metallic 1T or 1T′ structures of materials, such as MoTe 2 and oxygen-doped MoS 2 . On the other hand, metal substitution within the chalcogen vacancy or the formation of conduction filaments can also alter the conducting states, potentially enabling the development of small memristors for ultradense memory storage .…”