Photoinduced refractive index change in As2Se3 by 633nm illumination

Popta, Andy C. van; DeCorby, R. G.; Haugen, C.J.; Robinson, Travis; McMullin, J.N.; Tonchev, D.; Kasap, S. O.

doi:10.1364/oe.10.000639

Cited by 72 publications

(39 citation statements)

References 18 publications

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“…It was reported that the refractive index modulation (Δn) of As 2 Se 3 films under light irradiation reached 0.05 and the average unexposed index value was 2.7 or so in the Refs. [9]. Through simple calculation, the relevant amplitude modulation factor δ is equal to 0.037.…”

Section: Numerical Results and Discussionmentioning

confidence: 99%

Large Absolute Band Gap Achieved by Two Dimensionally Sinusoidal Dielectric Waveguide Arrays

Xiong

Lü

Liu

2010

J Infrared Milli Terahz Waves

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Complex lattice structure which can reduce the structure symmetry is most used to create or enlarge absolute band gaps. Another effective model to obtain absolute band gaps is proposed. The symmetry reduction approach in the presented model is to reduce the symmetry of the refractive index by sinusoidal modulation in square lattice. The band structure of two dimensionally sinusoidal dielectric waveguide array (SDWA) is calculated by the plane wave expansion method. We also investigate the influence of refractive index modulation on the formation of absolute band gaps. The results indicate that the SDWA model is beneficial to create and increase absolute band gaps.

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Section: Numerical Results and Discussionmentioning

confidence: 99%

Large Absolute Band Gap Achieved by Two Dimensionally Sinusoidal Dielectric Waveguide Arrays

Xiong

Lü

Liu

2010

J Infrared Milli Terahz Waves

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“…[1][2][3] These materials have been potentially used for infrared sensor, 4 phase change memory, 5 the all-optical switch and wavelength conversion in high-speed optical signal processing, 6 several passive and active fibre-or waveguide-based optical devices. [7][8][9][10][11] In the binary As-S ChGs, As 2 S 3 glass has chemical durability due to the average coordination number close to the critical coordination number of 2.4.…”

Section: Introductionmentioning

confidence: 99%

Photoconductivity of amorphous As2S8 chalcogenide film under bandgap light irradiation

Zou

Shen

et al. 2013

AIP Advances

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The photoconductivity of amorphous As 2 S 8 chalcogenide film under the irradiation of bandgap light is investigated. In the temperature range 300-350 K, the dark conductivity and photoconductivity of the annealed As 2 S 8 film increase with the temperature, and the dependence of the both on temperature shows that the conduction in As 2 S 8 film is an activated process having single activation energy. Under the irradiation of bandgap light, the photocurrents of the annealed and illuminated As 2 S 8 film increase with the irradiation intensity, and their difference indicates the existence of the light-soaked effect. Meanwhile, the photoconductivity degradation during the irradiation and the photocurrent decay after stopping the irradiation are observed. By adding the irradiation of the sub-bandgap light, the enhancement of photoinduced voltage occurs. C 2013 Author(s)

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“…These glasses are lowphonon energy materials and are generally transparent from the visible to infrared. [1][2][3][4] Their usage ranging from optics, electronics to memory applications has stimulated a wide interest for a more thorough understanding of such materials properties and the variations of such properties with composition. [5][6][7][8][9][10][11] As for As 40 S 60 , it has stability in structure and its chemical property due to its average coordination number (∼2.4), which closes to the critical coordination number.…”

Section: Introductionmentioning

confidence: 99%

Recovery response of optical stopping effect on P2As20S78 and Sn1As20S79 film waveguide

et al. 2012

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Effect of compressedon the size and stability of reverse micelles: Small-angle x-ray scattering and phase behavior study The Journal of Chemical Physics 118, 3329 (2003) The recovery response characteristics of optical stopping effect on the low-impurity As 20 S 80 system (P 2 As 20 S 78 and Sn 1 As 20 S 79 ) film waveguides are investigated in detail. Compared with As 20 S 80 , P 2 As 20 S 78 film waveguide deteriorates the response behavior of recovery propagation and is mainly characterized by the slow recovery propagation process with the disappearance of the fast rising edge. On the contrary, Sn 1 As 20 S 79 can improve evidently the earlier recovery stage by shortening response time of the rising edge to the milliseconds level, and also reduce the optical propagation loss. Experiments also show that the optical stopping effect can reach a saturated degree under He-Cd laser illumination for no less than 800 ms, and the addition of an assistant He-Ne laser may improve the recovery response slightly but not significantly. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx

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Photoinduced refractive index change in As2Se3 by 633nm illumination

Cited by 72 publications

References 18 publications

Large Absolute Band Gap Achieved by Two Dimensionally Sinusoidal Dielectric Waveguide Arrays

Large Absolute Band Gap Achieved by Two Dimensionally Sinusoidal Dielectric Waveguide Arrays

Photoconductivity of amorphous As2S8 chalcogenide film under bandgap light irradiation

Recovery response of optical stopping effect on P2As20S78 and Sn1As20S79 film waveguide

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