2009
DOI: 10.1063/1.3262496
|View full text |Cite
|
Sign up to set email alerts
|

Photoinduced spin-polarized current in InSb-based structures

Abstract: Articles you may be interested inAnomalous circular photogalvanic effect of the spin-polarized two-dimensional electron gas in Mg0.2Zn0.8O/ZnO heterostructures at room temperatureWe demonstrate the observation of spin-polarized photocurrent in InSb films grown on GaAs and InP substrates and InSb quantum wells where a nonequilibrium spin population has been achieved by using circularly polarized radiation. The characteristics of our observations indicated that the circular photo galvanic effect could be respons… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
15
0
1

Year Published

2010
2010
2022
2022

Publication Types

Select...
8
1

Relationship

1
8

Authors

Journals

citations
Cited by 15 publications
(16 citation statements)
references
References 22 publications
0
15
0
1
Order By: Relevance
“…It is necessary to mention that in [12] and [13], the origin of the observed helicity-dependent photoinduced currents in centrosymmetric strain-free InSb crystal and a porous gold film, respectively, has not been explained. In contrast, our theoretical and experimental results suggests that CPDE does explain the light-induced surface current in highly conductive porous films.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…It is necessary to mention that in [12] and [13], the origin of the observed helicity-dependent photoinduced currents in centrosymmetric strain-free InSb crystal and a porous gold film, respectively, has not been explained. In contrast, our theoretical and experimental results suggests that CPDE does explain the light-induced surface current in highly conductive porous films.…”
Section: Discussionmentioning
confidence: 99%
“…The CPDE manifests itself as a helicity-dependent current propagating perpendicular to the plane of incidence. It was observed at oblique incidence in quantum wells [3], graphene [6, 26], InSb [12] and bulk tellurium [27]. At the nanosecond excitation, the CPDE has been recently observed in nanoporous gold thin film [13], 2D metallic photonic crystal slabs [28] and Ag/Pd nanocomposite [14, 29, 30].…”
Section: Introductionmentioning
confidence: 99%
“…Here we report the generation of spin polarized currents in n-type InSb QWs [11] via the circular photo-galvanic effect (CPGE) [12][13][14][15] . A simplified picture of CPGE to generate spin-polarized current is presented in Fig.…”
Section: Spin Polarized Current In Insb Qwsmentioning
confidence: 99%
“…Compared to GaMnAs [5], NGFS have smaller band gaps, larger g-factors and spin-orbit coupling [6,7], and much higher electron and hole mobilities. The narrow gap materials are also more interesting and difficult to treat theoretically since there is strong band-mixing between the conduction and valence bands, unlike GaAs where the conduction and valence bands can be treated separately [8,9].…”
Section: Introductionmentioning
confidence: 99%