Photoinduced transformations and holographic recording in nanolayered a-Se/As 2 S 3 and AsSe/As 2 S 3 films

Palyok, V.; Mishak, Alexander; Szabó, I.A.; Beke, D.L.; Kikineshi, A. A.

doi:10.1007/s003390050930

Cited by 37 publications

(44 citation statements)

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“…25,26 Moreover the experiments on holographic recording in Se/ As 2 S 3 samples also suggest the glass transition temperature shifts to higher temperatures. 27 The observation of photodarkening in our multilayered film at room temperature provides an indirect proof of the shift of T g to higher temperature under confined conditions.…”

Section: Discussionmentioning

confidence: 58%

Kinetics and chemical analysis of photoinduced interdiffusion in nanolayered Se/As2S3 films

Adarsh

Naik

Sangunni

et al. 2008

Journal of Applied Physics

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We have studied the kinetics of photoinduced effects in nanolayered Se/ As 2 S 3 film by in situ optical absorption measurements, which reveal that photodarkening in these films is followed by photoinduced diffusion. An increase in disorder during photodarkening and its subsequent decrease during photoinduced diffusion were also observed. The observation of photodarkening of Se at room temperature when confined between As 2 S 3 layers suggests that the glass transition temperature of Se shifts to higher energy. The analysis shows that the atoms which take part in photodarkening play a vital role in photoinduced diffusion. The x-ray photoelectron spectroscopy measurements show the atomic movements during photoinduced diffusion. It also shows that some of the As-S bonds are converted into As-Se bonds. Since it is energetically difficult to break an As-S bond to form an As-Se bond, we assume that the new bond formations are taking place by the bond rearrangement mechanism.

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Section: Discussionmentioning

confidence: 58%

Kinetics and chemical analysis of photoinduced interdiffusion in nanolayered Se/As2S3 films

Adarsh

Naik

Sangunni

et al. 2008

Journal of Applied Physics

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“…As 20 Se 80 contains two distinct parts. First part is fast (few seconds), with a comparatively small increase of the volume, which is connected with bond breaking, rearrangement and the free volume change (up to 1-2 %).…”

Section: Introductionmentioning

confidence: 99%

“…The latter was successfully used for the fabrication of not only single, but also multilayered structures from the As-S(Se) system [20]. Pulsed laser deposition (PLD) was used earlier to create chalcogenide based single and multilayer nano-structures [21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Surface patterning in Ge Se amorphous layers

Csarnovics

Vereš

Němec

et al. 2017

Journal of Non-Crystalline Solids

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Laser-induced surface relief patterns were performed in Ge-Se amorphous layers.Compositional and fabrication method dependences on recording were established.Modulation depth of the created structures increases with increasing Se content.Advantage of pulsed laser deposition in comparison to thermal evaporation is shown.Thermal annealing has essential influence on the pattering parameters. AbstractCompositional and fabrication method dependences of laser-induced geometrical surface relief formation in Ge-Se amorphous layers were investigated with the aim to determine the possible role of initial conditions in the mechanism and efficiency of optical recording. The results show that pulsed laser deposition has some advantages in composition preservation and surface relief formation in comparison with thermal evaporation for producing layers with high sensitivity and efficiency of surface relief grating formation, especially in layers with Ge 24 Se 76 composition. It was shown that modulation depth of the created surface structures increases with increasing Se content in Ge-Se amorphous chalcogenide layers. Thermal annealing has essential influence on the recording parameters, enabling additional insight into the possible mechanisms of light induced surface patterning in this type of light-sensitive amorphous chalcogenides. Raman spectroscopy was used to identify local structure of produced surface patterns.

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“…8,11,12 Diffusion processes at interfaces in general are also related to the problem of thermal stability of heterogeneous systems, which is very important in nanostructures, especially under additional external influences (light, fields, heat flow). [8][9][10][11] It is also known, that amorphous solid structural changes and interdiffusion as well as their interrelation with the optical parameters in a-Si/Ge and As 6 Se 94 /Se 80 Te 20 systems. Possible applications for optical information recording for these results are also considered.…”

Section: Introductionmentioning

confidence: 99%

“…such a comparison can bring additional information about the role of photo-induced structural effects in intermixing as well. 5,8,9 The photo-stimulated interdiffusion in a-Se/As 2 S 3 system 8, 9 can be used for surface hologram recording. On the other hand there are no publications about similar process in a-Si/Ge, although thermo-stimulated interdiffusion can lead to structural changes in these multilayers as well.…”

Section: Introductionmentioning

confidence: 99%

Laser-induced optical changes in amorphous multilayers

Malyovanik

Ivan

Csík

et al. 2003

Journal of Applied Physics

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It is shown that the well-known blue-shift of the fundamental absorption edge in as-deposited compositionally modulated amorphous Si/Ge and As 6 Se 94 /Se 80 Te 20 multilayers (with periods of 4-8 nm) is further enhanced due to the thermal or laser-induced intermixing of adjacent layers.The laser-induced intermixing process, as supported by experiments and model calculations, can be attributed to both the local heating and photo-effects in As 6 Se 94 /Se 80 Te 20 multilayers, while only the thermal effects were observed for Si/Ge multilayers. Structural transformations, based on this enhanced interdiffusion, provides good capability for spatially patterning optoelectronic devices and digital information recording. a) Corresponding author.

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Photoinduced transformations and holographic recording in nanolayered a-Se/As 2 S 3 and AsSe/As 2 S 3 films

Cited by 37 publications

References 0 publications

Kinetics and chemical analysis of photoinduced interdiffusion in nanolayered Se/As2S3 films

Kinetics and chemical analysis of photoinduced interdiffusion in nanolayered Se/As2S3 films

Surface patterning in Ge Se amorphous layers

Laser-induced optical changes in amorphous multilayers

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