Photoionization cross section of donor single dopant in multilayer quantum dots under pressure and temperature effects

Jaouane, M.; Sali, A.; Fakkahi, A.; Arraoui, R.; Ed-Dahmouny, A.; Ungan, F.

doi:10.1016/j.physe.2022.115450

Cited by 18 publications

(4 citation statements)

References 27 publications

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“…The results of prior studies indicate that the PCS is influenced by the quantum size and impurity position. Graphically, the PCS is similar to the Gauss function curve, and the amplitude grows with the dot radius [26][27][28].…”

Section: Introductionmentioning

confidence: 87%

“…Let us introduce the theoretical part of the PCS describing the transitions from the donor impurity ground state (|Ψ 1 1 , with energy E 1 1 ) to the final state of the confined electron without the donor impurity effects (|Ψ 0 1 , with energy E 0 1 ). In the dipole approximation, it is given by the expression [19,26,27].…”

Section: Theoretical Frameworkmentioning

confidence: 99%

“…In addition, in this condition, the PCS may then be simplified by approximating the δ-function by a Lorentzian one [19,26,27]…”

Section: Theoretical Frameworkmentioning

confidence: 99%

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Electric and Magnetic Fields Effects in Vertically Coupled GaAs/AlxGa1−xAs Conical Quantum Dots

et al. 2023

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Vertically coupled quantum dots have emerged as promising structures for various applications such as single photon sources, entangled quantum pairs, quantum computation, and quantum cryptography. We start with a structure composed of two vertically coupled GaAs conical quantum dots surrounded by AlxGa1−x, and the effects of the applied electric and magnetic fields on the energies are evaluated using the finite element method. In addition, the effects are evaluated by including the presence of a shallow-donor impurity. The electron binding energy behavior is analyzed, and the effects on the photoionization cross-section are studied. Calculations are carried out in the effective mass and parabolic conduction band approximations. Our results show a notable dependence on the electric and magnetic fields applied to the photoionization cross-section. In general, it has been observed that both the electric and magnetic fields are useful parameters for inducing blueshifts of the resonant photoionization cross-section structure, which is accompanied by a drop in its magnitude.

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Section: Introductionmentioning

confidence: 87%

Section: Theoretical Frameworkmentioning

confidence: 99%

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Electric and Magnetic Fields Effects in Vertically Coupled GaAs/AlxGa1−xAs Conical Quantum Dots

et al. 2023

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“…2 ) [13,14]. In addition, the effects of exteriors perturbations such as magnetic, electric, and intense laser fields, pressure, and temperature on the electric and optical properties of the particles trapped on QD have been widely investigated in the literature [15][16][17][18][19][20][21][22][23][24][25]. Niculescu et al [26] have examined the impact of the dome-shaped QD's impurity state dependence on the magnetic field; they found that the ground state energy's diamagnetic shift increases monotonically with the applied field.…”

Section: Introductionmentioning

confidence: 99%

Unveiling the Role of Donor Impurity Position on the Electronic Properties in Strained Type I and Type II Core/Shell Quantum Dots under Magnetic Field

Pérez,

Aghoutane,

Laroze

et al. 2023

Materials

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In this theoretical investigation, we delve into the significant effects of donor impurity position within core/shell quantum dot structures: type I (CdTe/ZnS) and type II (CdTe/CdS). The donor impurity’s precise location within both the core and the shell regions is explored to unveil its profound influence on the electronic properties of these nanostructures. Our study investigates the diamagnetic susceptibility and binding energy of the donor impurity while considering the presence of an external magnetic field. Moreover, the lattice mismatch-induced strain between the core and shell materials is carefully examined as it profoundly influences the electronic structure of the quantum dot system. Through detailed calculations, we analyze the strain effects on the conduction and valence bands, as well as the electron and hole energy spectrum within the core/shell quantum dots. The results highlight the significance of donor impurity position as a key factor in shaping the behaviors of impurity binding energy and diamagnetic susceptibility. Furthermore, our findings shed light on the potential for tuning the electronic properties of core/shell quantum dots through precise impurity positioning and strain engineering.

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The impact of the electric field on the photoionization cross section, polarizability, and donor impurity binding energy in multilayered spherical quantum dot

et al. 2023

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Photoionization cross section of donor single dopant in multilayer quantum dots under pressure and temperature effects

Cited by 18 publications

References 27 publications

Electric and Magnetic Fields Effects in Vertically Coupled GaAs/AlxGa1−xAs Conical Quantum Dots

Electric and Magnetic Fields Effects in Vertically Coupled GaAs/AlxGa1−xAs Conical Quantum Dots

Unveiling the Role of Donor Impurity Position on the Electronic Properties in Strained Type I and Type II Core/Shell Quantum Dots under Magnetic Field

The impact of the electric field on the photoionization cross section, polarizability, and donor impurity binding energy in multilayered spherical quantum dot

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