Photoluminescence analysis of shallow acceptor in CdTe films on GaAs(100) substrates

Abstract

In this study, photoluminescence (PL) measurements are performed for analyzing shallow acceptor states in undoped cadmium telluride lms on gallium arsenide substrates. PL and time-resolved photoluminescence spectra are analyzed in the vicinity of a 1.55 eV band. The residual impurity concentration in the undoped cadmium telluride lm is greater than 1.5 × 10 18 cm −3 . By analyzing the peak shift of the 1.55 eV band as a function of time after pulsed excitation, the bound-tobound reaction constant for the undoped cadmium telluride lm on a gallium arsenide substrate is estimated to be 2.4 × 10 7 s −1 .