Photoluminescence and band offset of type-II AlGaAsSb/InP heterostructures

Ostinelli, O.; Almuneau, Guilhem; Bächtold, W.

doi:10.1088/0268-1242/21/5/020

Cited by 13 publications

(7 citation statements)

References 19 publications

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“…AlAs x Sb 1−x is a versatile large-gap barrier material that can be lattice matched to InP, InAs, or GaSb substrates [8,[17][18][19]. The studied ternary alloys (Ga,Al)(As,Sb) form a border of the Al x Ga 1−x As y Sb 1−y quaternary alloys which are interesting materials in the commercial technologies [20].…”

Section: Introductionmentioning

confidence: 99%

First-principles study of the ternary semiconductor alloys (Ga,Al)(As,Sb)

Hassan

Breidi

Ghémid

et al. 2010

Journal of Alloys and Compounds

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Section: Introductionmentioning

confidence: 99%

First-principles study of the ternary semiconductor alloys (Ga,Al)(As,Sb)

Hassan

Breidi

Ghémid

et al. 2010

Journal of Alloys and Compounds

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“…The determination of the VBO by measuring the type II PL emission is a very easy and precise method. Ostinelli et al calculated in their work the VBO between InP and AlGaAsSb-alloys of various compositions using the type II transition 24 and come to a similar degree of precision for the VBO of these materials. Since the measurement of the PL with very high resolution is comparably easy, the main sources of error for the VBO determination lie in the evaluation of the PL shift.…”

Section: Fig 4: (Color Online)mentioning

confidence: 82%

“…Mostly, this method has been used on multi quantum wells made of the In-Al-As-Ga-Sb materials. [23][24][25] In this work, we present a combined theoretical and experimental approach to determine the VBO between CdSe and ZnTe and compare the calculations with the experimentally determined value. The theoretical part presents a refined approach for the calculation of the VBO.…”

Section: Introductionmentioning

confidence: 99%

Determination of valence-band offset at cubic CdSe/ZnTe type-II heterojunctions: A combined experimental and theoretical approach

et al. 2012

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International audienceWe present a combined experimental and theoretical approach for the determination of the low-temperature valence band offset (VBO) at CdSe/ZnTe heterojunctions with underlying zincblende crystal structure. On the experimental side, the optical transition of the type II interface allows for a precise measurement of the type II band gap. We show how the excitation-power dependent shift of this photoluminescence (PL) signal can be used for any type II system for a precise determination of the VBO. On the theoretical side, we use a refined empirical tight-binding parametrization in order to accurately reproduce the band structure and density of states around the band gap region of cubic CdSe and ZnTe and then calculate the branch point energy (also known as charge neutrality level) for both materials. Because of the cubic crystal structure and the small lattice mismatch across the interface, the VBO for the material system under consideration can then be obtained from a charge neutrality condition, in good agreement with the PL measurements

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“…4, dash-dotted lines CB Z and VB Z ). Both the approaches mentioned above are in some conflict with experimental data obtained for the conduction band discontinuity at the type II GaSb 0.5 As 0.5 /InP heterointerface [5,18], because it was found that the discontinuity in the conduction band was about 0.1-0.12 eV, which corresponds to an electron affinity w GaAsSb ¼ À4.27 eV. This is a well lattice-matched heterostructure and the influence of strain-induced effects can be disregarded.…”

Section: Article In Pressmentioning

confidence: 82%