Photoluminescence and electrical properties of Eu3+ doped CaBi8Ti7O27 intergrowth ceramics

Fan, Gang; Jiang, Xiangping; Chen, Chao; Chen, Yunjing; Du, Keyi; Tu, Na; Jiang, Xi‐Fei; Xiang, Xia; Wang, Pengbin

doi:10.1007/s10854-018-8630-2

Cited by 3 publications

(1 citation statement)

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“…In order to enhance the ferroelectric properties, generally two methods are adopted: i) thin-film route and ii) intergrowth route [2]. Recently, considerable attention has been paid to intergrowth ferroelectric ceramics in order to enlarge the ferroelectric and fatigue-free properties [2,[11][12][13][14]. In addition, many researchers have reported that one-half unit cell of nlayered structure combined with another (n+1)-layered structure along c-axis is an effective approach to enhance potential for ferroelectric applications [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Structure and dielectric properties of Sm3+ modified Bi4Ti3O12- SrBi4Ti4O15 intergrowth ferroelectrics

Shobhan¹,

Simhachalam²,

Prasad³

et al. 2020

PAC

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Novel samarium modified intergrowth ferroelectric ceramics, namely Bi 4 Ti 3 O 12 -SrBi 4 Ti 4 O 15 , were synthesized by conventional solid state reaction method and sintered at 1100°C for 5 h. X-ray diffraction studies revealed the formation of a single phase with the signature of intergrowth oxide and plate like morphology was observed by scanning electron microscopic analyses. The orthorhombicity, the grain size and transition temperature were found to decrease with the increase of Sm content. The dielectric and modulus measurements were performed at different temperatures and frequency ranges. The transition temperature was found to be around 500°C. The variations of imaginary part of modulus and dielectric constant with the temperature showed diffuse phase transition. The results are corroborated to the defect based mechanism and Curie deviation factor was evaluated by using the modified Curie-Weiss law. Polarization-electric filed curves displayed a typical narrow hysteresis loop at room temperature by applying an electric field of 70 kV/cm. However, above room temperature the hysteresis loop area was found to be increased. The overall results revealed that the complex dipoles and oxygen vacancies are playing a dominant role in the dielectric and electrical properties, and therefore the adopted intergrowth processing was found to be an effective approach to obtain potentially good ferroelectric materials.

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