Photoluminescence and field emission properties of ZnS:Mn nanoparticles synthesized by rf-magnetron sputtering technique

Ghosh, Priyanka; Ahmed, Sk. Faruque; Jana, Sourav Kanti; Chattopadhyay, K.

doi:10.1016/j.optmat.2006.07.016

Cited by 82 publications

(20 citation statements)

References 44 publications

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“…Presence of localized magnetic ions in semiconductors leads to exchange interaction between s-p band electrons and the Fe 2+ electrons (sp-d exchange interaction). Similar behavior has been reported by different groups for Zn 1−x Mn x S system [25,29].…”

Section: Absorption Coefficient and Optical Energy Band Gap Analysissupporting

confidence: 90%

Microstructural and optoelectronic properties of diluted magnetic semiconducting Cd1−xFexS nanocrystalline films

El-Hagary

Shaaban

Emam-Ismail

et al. 2012

Journal of Alloys and Compounds

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Section: Absorption Coefficient and Optical Energy Band Gap Analysissupporting

confidence: 90%

Microstructural and optoelectronic properties of diluted magnetic semiconducting Cd1−xFexS nanocrystalline films

El-Hagary

Shaaban

Emam-Ismail

et al. 2012

Journal of Alloys and Compounds

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“…Optical absorption studies show that the shifting of absorption edge towards blue region with respect to bulk samples of ZnS indicates increase in effective band gap energy with decreasing particle size. The observed blue shift in the excitation wavelength is attributed to quantum confinement effect with respect to bulk materials of these compositions (Ghosh et al 2007). Since the particle size as calculated by Deby-Scherer formula for both ZnS (=3.22 nm) and Ba modified ZnS (=4.22 nm) is less than Bohr radius (10.4 nm).…”

Section: Structural and Ftir Analysismentioning

confidence: 83%

“…Now the mixing of d-levels with the conduction band will increase the energy of the host conduction band. Consequently, the bandgap will decrease on introduction of Ba in the ZnS matrix (Ghosh et al 2007). The existence of the exciton has a strong influence on the electronic properties of the semiconductor and its optical absorption (Cho et al 1999).…”

Section: Structural and Ftir Analysismentioning

confidence: 99%

“…Such variation of impedance with applied frequency shows the capacitive impedance associated with the nano-materials. Quantum dots are associated with capacitance and quantum dot impedance (or admittance) is basically due to capacitance in the specimen (Cho et al 1999;Ghosh et al 2007). Due to variation in size as well as shape, capacitive impedance and critical frequencies for the samples are different.…”

Section: Structural and Ftir Analysismentioning

confidence: 99%

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Optical and impedance studies of pure and Ba-doped ZnS quantum dots

Firdous¹,

Baba²,

Singh

et al. 2014

Appl Nanosci

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Chemical precipitation method using a highboiling solvent is used to synthesize ZnS and Ba-doped ZnS quantum dots. The presence of organic ligands in the prepared nanostructures is verified using Fourier transform infra-red spectroscopic studies. The samples have been analysed using X-ray diffraction analysis confirming nanocrystallinity of the as-prepared quantum dots (QD). The mean crystal size obtained by full width half maxima analysis is 3.2 nm for ZnS and 3.9, 4.2 nm for ZnS:Ba (2, 4 mM). TEM micrographs also reveal nanosized particles of ZnS and Ba-doped ZnS. An optical absorption study conducted in UV-Vis range 150-600 nm reveals the transparency of these quantum dots in entire visible range but not in ultraviolet range. The results based on optical analysis yield band gap values as 4.88 eV for ZnS and 4.69, 4.43 eV for ZnS:Ba (2, 4 mM) quantum dots. Impedance analysis of the samples was carried out to reveal the variation of impedance with frequency at room temperature. These results show the capacitive admittance associated with the quantum dots and hence nanostructure ZnS and Ba-doped ZnS can have potential applications in electronics as nano-tuned devices in which resonant frequency can be adjusted by controlling the size and shape of the quantum dots.

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“…The nature of the optical interband transition and value of the energy gap E g can be determined using the Tauc and Davis-Mott models [39,40] …”

Section: Resultsmentioning

confidence: 99%

Synthesis, growth mechanism and optical characterization of zinc nitride hollow structures

Khan

Cao

2010

Journal of Crystal Growth

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Photoluminescence and field emission properties of ZnS:Mn nanoparticles synthesized by rf-magnetron sputtering technique

Cited by 82 publications

References 44 publications

Microstructural and optoelectronic properties of diluted magnetic semiconducting Cd1−xFexS nanocrystalline films

Microstructural and optoelectronic properties of diluted magnetic semiconducting Cd1−xFexS nanocrystalline films

Optical and impedance studies of pure and Ba-doped ZnS quantum dots

Synthesis, growth mechanism and optical characterization of zinc nitride hollow structures

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