Photoluminescence and optical gain due to exciton-electron scattering in a high quality GaN thin film

Nakayama, Masaaki; Tanaka, H.; Ando, M.; Uemura, Taku

doi:10.1063/1.2226992

Cited by 13 publications

(7 citation statements)

References 17 publications

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“…As shown in Fig. 4(a 00 -c 00 ), the PL peak wavelengths demonstrate facet dependence in the vicinity of the wavelength of 364 nm, which corresponds to the PL of exciton-electron scattering in GaN at room temperature [22]. Furthermore, facets inclined toward [0001] are observed to have longer PL peak wavelengths in samples with all V/III ratio conditions.…”

Section: Discussionmentioning

confidence: 77%

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Tanaka

Barry

Nagamatsu

et al. 2017

Phys. Status Solidi A

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In this study, GaN m‐plane Schottky barrier diodes fabricated with a metalorganic vapor‐phase epitaxy on a GaN substrate were investigated using emission microscope, photoluminescence, and cathodoluminescence. In addition, facet dependence of leakage current under reverse‐biased condition was observed. We showed that the leakage‐current distribution was caused by the facet dependence of the carrier concentration and oxygen concentration. These results can provide important suggestions for the fabrication of m‐plane devices. (a) four‐faceted hillocks on m‐plane GaN MOVPE sample, facet dependence of (b) leakage current and (c) PL peak intensity of the m‐plane GaN Schottky barrier diode.

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Section: Discussionmentioning

confidence: 77%

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Tanaka

Barry

Nagamatsu

et al. 2017

Phys. Status Solidi A

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“…In a high temperature region, a part of photogenerated excitons are dissociated into electrons and holes by thermal energy. As a result, it is expected that PL from exciton-carrier inelastic scattering occurs, which was confirmed in II-VI semiconductors [6,8,9], GaN [10], and cuprous halides [11]. Note that only exciton-electron inelastic scattering has been observed until now.…”

Section: Introductionmentioning

confidence: 82%

Photoluminescence from exciton‐electron inelastic scattering in a GaAs/AlAs multiple‐quantum‐well structure

Nakanishi

Furukawa

Nakayama

2015

Phys. Status Solidi C

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We have investigated the characteristics of photoluminescence (PL) from exciton‐electron inelastic scattering in a GaAs (5.1 nm)/AlAs (5.1 nm) multiple‐quantum‐well structure. The excitation power dependence of PL spectra was measured in a wide temperature region from 10 to 285 K. We detected a PL band which appears with a threshold‐like nature at each temperature. In a low temperature region below ∼80 K, the energy spacing between the threshold‐like appearance PL band and heavy‐hole exciton almost agrees with the exciton binding energy. This indicates that the PL band originates from well‐known exciton‐exciton inelastic scattering. In contrast, in a high temperature region above ∼90 K, the energy spacing continuously increases with an increase in temperature. The temperature dependence of the energy spacing is explained by a theoretical model for exciton‐electron inelastic scattering considering energy and momentum conservation in the scattering process. Thus, it is concluded that the mechanism of the threshold‐like appearance PL band related to exciton inelastic scattering changes with temperature. In addition, we confirmed that the exciton‐electron inelastic scattering produces an optical gain using a variable stripe length method for PL measurements. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…The interest for extensive studies of photoluminescence (PL) spectra [7,8,9,10,11,12,13,14,15,16,17,18,19,20,21,22] lies in the fact that they are useful to study a rich variety of phenomena in semiconductor physics and allow non-destructive characterization of semiconductors. In the case of mixed exciton/electron-hole plasmas, many processes occur that contribute to PL spectra.…”

Section: Introductionmentioning

confidence: 99%

Photon emission induced by elastic exciton-carrier scattering in semiconductor quantum wells

et al. 2008

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We present a study of the elastic exciton-electron (X − e − ) and exciton-hole (X − h) scattering processes in semiconductor quantum wells, including fermion exchange effects. The balance between the exciton and the free carrier populations within the electron-hole plasma is discussed in terms of ionization degree in the nondegenerate regime. Assuming a two-dimensional Coulomb potential statically screened by the free carrier gas, we apply the variable phase method to obtain the excitonic wavefunctions, which we use to calculate the 1s exciton-free carrier matrix elements that describe the scattering of excitons into the light cone where they can radiatively recombine. The photon emission rates due to the carrier-assisted exciton recombination in semiconductor quantum-wells (QWs) at room temperature and in a low density regime are obtained from Fermi's golden rule, and studied for mid-gap and wide-gap materials. The quantitative comparison of the direct and exchange terms of the scattering matrix elements shows that fermion exchange is the dominant mechanism of the exciton-carrier scattering process. This is confirmed by our analysis of the rates of photon emission induced by electron-assisted and hole-assisted exciton recombinations.

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Photoluminescence and optical gain due to exciton-electron scattering in a high quality GaN thin film

Cited by 13 publications

References 17 publications

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Facet dependence of leakage current and carrier concentration in m-plane GaN Schottky barrier diode fabricated with MOVPE

Photoluminescence from exciton‐electron inelastic scattering in a GaAs/AlAs multiple‐quantum‐well structure

Photon emission induced by elastic exciton-carrier scattering in semiconductor quantum wells

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