Photoluminescence and optical gain in highly excited GaN

Eckey, L.; Holst, J.; Hoffman, A.; Broser, I.; Amano, Hiroshi; Akasaki, Isamu; Detchprohm, Theeradetch; Hiramatsu, Kohzy

doi:10.1016/s0022-2313(97)00215-9

Cited by 9 publications

(2 citation statements)

References 3 publications

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“…As silicon based materials were tested in the 1960s to the 90s with no clear industrial success it was found that the thermal quenching effect in RE-doped semiconductors is related to the value of the optical band gap of the material [6]. Since then and within the scope of temperatureinsensitive device application, RE 3+ ions have been extensively investigated in semiconductors and more especially in wider band gap compounds exhibiting lower temperature quenching: nitrided or oxided silicon compounds (SiO n , SiN, Si 3 N 4 ) , ZnTe, GaP, or other nitrides: GeN, GaN, AlN… [7][8][9][10][11][12][13][14][15].…”

mentioning

confidence: 99%

Influence of the magnetron power on the Er‐related photoluminescence of AlN:Er films prepared by magnetron sputtering

Hussain

Brien²,

Rinnert

et al. 2010

Phys. Status Solidi (c)

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The effect of magnetron power on the room temperature 1.54 μm infra-red photoluminescence intensity of erbium doped AlN films grown by r. f. magnetron sputtering, has been studied. The AlN:Er thin films were deposited on (001) Silicon substrates. The study presents relative photoluminescence intensities of nanocrystallized samples prepared with identical sputtering parameters for two erbium doping levels (0.5 and 1.5 atomic %). The structural evolution of the crystallites as a function of the power is followed by transmission electron microscopy.

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mentioning

confidence: 99%

Influence of the magnetron power on the Er‐related photoluminescence of AlN:Er films prepared by magnetron sputtering

Hussain

Brien²,

Rinnert

et al. 2010

Phys. Status Solidi (c)

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“…42) It was unclear why the STE appeared at the higher-energy side of the SPE, although the exciton localization may have contributed to this behavior. 66) In III-nitride semiconductors, the exciton-related mechanisms of optical gain formation have mainly been reported for GaN epilayers [67][68][69] and In x Ga 1−x N-based MQWs 66) and epilayers, 70) whereas excitonic STE has not been reported in Al x Ga 1−x N-based systems. Even though the mechanism of optical gain formation is unknown, we demonstrated that STE occurred from excitonic processes in Al x Ga 1−x N-based UV-C MQWs.…”

Section: Radiative and Nonradiative Recombination Lifetimesmentioning

confidence: 99%

Evaluation of internal quantum efficiency and stimulated emission characteristics in AlGaN-based multiple quantum wells

Yamada

Murotani

Maeda

et al. 2021

Jpn. J. Appl. Phys.

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Based on our recent studies, we review our proposed experimental method for evaluating internal quantum efficiency, which is a critical parameter for semiconductor light-emitting device performance. We validated our evaluation method by comparing the results of the efficiency curve analysis using an exciton rate equation model with the results of radiative and nonradiative recombination dynamics obtained by time-resolved photoluminescence spectroscopy. We also review the characteristics of the stimulated emission observed from optically pumped Al x Ga1−x N-based multiple quantum wells. The most important finding was the contribution of excitons to optical gain formation. The excitonic gain is expected to decrease the threshold carrier density for stimulated emission and lead to higher performance of semiconductor laser diodes.

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