1989
DOI: 10.1016/0022-3093(89)90637-6
|View full text |Cite
|
Sign up to set email alerts
|

Photoluminescence and optically detected magnetic resonance of a-Si1−xCx:H films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

2
8
0

Year Published

1991
1991
2014
2014

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 42 publications
(10 citation statements)
references
References 6 publications
2
8
0
Order By: Relevance
“…At the same time, the width of the PL bands varies from 250 to 150 nm. Our observations agree nicely with the results of other laboratories who have conducted extensive studies on this material (Siebert et al 1987;Liedtke et al 1989;Tessler & Solomon 1995).…”
Section: Resultssupporting
confidence: 82%
“…At the same time, the width of the PL bands varies from 250 to 150 nm. Our observations agree nicely with the results of other laboratories who have conducted extensive studies on this material (Siebert et al 1987;Liedtke et al 1989;Tessler & Solomon 1995).…”
Section: Resultssupporting
confidence: 82%
“…Excitation of a-C : H by band edge photons will tend to create an electron and hole in the same cluster where they will remain bound by the surrounding sp3 barrier. This binding favours intracluster radiative recombination, giving luminescence in a-C : H and carbon-rich a-Si, -xCx : H which is efficient and largely independent of temperature and electric field, as observed previously (Lin and Feldman 1982, Siebert, Carius, Fuhs and Jahn 1987, Liedkte et al 1989, Vassilyev et al 1989. In contrast, luminescence in a-Si : H and siliconrich a-Si, -&: H is strongly quenched at moderate temperatures (Siebert et al 1987, Vassilyev et al 1989.…”
supporting
confidence: 54%
“…In contrast, luminescence in a-Si : H and siliconrich a-Si, -&: H is strongly quenched at moderate temperatures (Siebert et al 1987, Vassilyev et al 1989. Liedtke et al (1989) noted that recombination rates in carbon-rich a-Si, -,C,:H alloys do not correlate with the defect density, as they do in The presence of localized states above the optical band edges in a-C : H allows luminescence to occur above its optical gap. Figure 5 compares the peak luminescence to occur above its optical gap.…”
mentioning
confidence: 90%
“…Some groups have proposed that there is a basic change in the structure of a-CH/Si alloys near a carbon atomic fraction C/(C+Si) of 0.5 [7,8]. At carbon fractions higher than 0.5 the structure becomes polymer like.…”
Section: Introductionmentioning
confidence: 98%