Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers

Eckey, L.; Gfug, U. von; Holst, J.; Hoffmann, A.; Kaschner, A.; Siegle, H.; Thomsen, C.; Schineller, B.; Heime, K.; Heuken, M.; Schön, Oliver; Beccard, R.

doi:10.1063/1.368853

Cited by 97 publications

(66 citation statements)

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“…The origin of this band is still not completely understood and recent experimental results indicate that it might consist of more than one emission band [5,22]. Most researchers agree that the blue band is caused by a transition between a deep localized donor and an acceptor state (likely a Mg-related acceptor) [4,5,23]. Both theoretical [4,24] and experimental [4,5] studies concluded that the incorporation of high Mg concentrations is accompanied by a formation of additional deep donors.…”

Section: Resultsmentioning

confidence: 99%

“…5). The origin of this band is still not completely understood and recent experimental results indicate that it might consist of more than one emission band [5,22]. Most researchers agree that the blue band is caused by a transition between a deep localized donor and an acceptor state (likely a Mg-related acceptor) [4,5,23].…”

Section: Resultsmentioning

confidence: 99%

“…Most researchers agree that the blue band is caused by a transition between a deep localized donor and an acceptor state (likely a Mg-related acceptor) [4,5,23]. Both theoretical [4,24] and experimental [4,5] studies concluded that the incorporation of high Mg concentrations is accompanied by a formation of additional deep donors. The formation energy of these donors rapidly decreases as the Fermi-level approaches the valence band [13].…”

Section: Resultsmentioning

confidence: 99%

“…[4] PL results indicated that strong Mg doping of GaN generates three deep donor levels in addition to the shallow Mg acceptor, giving rise to a compensation mechanism that is directly related to the incorporation of Mg. [5] The CL emission of moderately Mg-doped GaN is dominated by a shallow donor-acceptor pair (DAP) emission at an energy of 3.25-3.28 eV [6,7] at low temperatures (Fig. 1).…”

Section: Resultsmentioning

confidence: 99%

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Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN

et al. 2003

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Moderately and heavily Mg-doped GaN were studied by a combination of post-growth annealing processes and electron beam irradiation techniques during cathodoluminescence (CL) to elucidate the chemical origin of the recombination centers responsible for the main optical emission lines. The shallow donor at 20-30 meV below the conduction band, which is involved in the donor-acceptor-pair (DAP) emission at 3.27 eV, was attributed to a hydrogen-related center, presumably a (V N -H) complex. Due to the small dissociation energy (<2 eV) of the (V N -H) complex, this emission line was strongly reduced by low-energy electron irradiation. CL investigations of the DAP at a similar energetic position in Si-doped (n-type) GaN indicated that this emission line is of different chemical origin than the 3.27 eV DAP in Mg-doped GaN. A slightly deeper DAP emission centered at 3.14 eV was observed following low-energy electron irradiation, indicating the appearance of an additional donor level with a binding energy of 100-200 meV, which was tentatively attributed to a V N -related center. The blue band (2.8-3.0 eV) in heavily Mg-doped GaN was found to consist of at least two different deep donor levels at 350±30 meV and 440±40 meV. The donor level at 350±30 meV was strongly affected by electron irradiation and attributed to a H-related defect.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN

et al. 2003

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“…The shape of the observed DAP related peaks changes between the different samples. The lineshape of this band depends on the concentration of Mg, as a consequence of the complexity of the Mg acceptor configuration in the GaN lattice [36], and the difficulty to set up the conditions for the optimum Mg doping. Recently, different DAP transitions associated with three different Mg-related acceptor levels have been reported [37].…”

Section: Experimental and Samplesmentioning

confidence: 99%

Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD

et al. 2017

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In this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the residual strain of the layers and the influence of the porosity in the light extraction. The nanoporous GaN epitaxial layers are under tensile strain, although the strain is progressively reduced as the deposition time and the thickness of the porous layer increases, becoming nearly strain free for a thickness of 1.7 μm. The analysis of the experimental data point to the existence of vacancy complexes as the main source of the tensile strain.

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Raman Imaging

Treado¹,

Nelson²

2001

Handbook of Vibrational Spectroscopy

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The sections in this article are Introduction R aman Image Contrast Reveals Composition and Structure R aman Images are Multidimensional Imaging Strategies Point‐by‐Point Scanning Line Imaging Widefield Imaging R aman Spectrum Enables Objective Imaging Widefield R aman Imaging System Designs Hadamard Transform Fiber Array R aman Imaging Dielectric Interference Filter Acousto‐Optic Tunable Filter Liquid Crystal Imaging Spectrometers Lyot LCTF Evans Split Element Filters F abry– P erot LCTF R aman Imaging Fiberscopes Fiberscope Imaging Performance R aman Imaging Performance Comparison Problem Solving with R aman Imaging R aman Image Processing General Requirements Multivariate Image Analysis Correlation Analysis Factor Analysis Cluster Analysis Applications Semiconductors Silicon Silicon Carbide Gallium Nitride and Related Alloys Fuel Cells Meteorites and Minerals Meteorites Minerals Polymers Pharmaceuticals Biomaterials Conclusions

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Photoluminescence and Raman study of compensation effects in Mg-doped GaN epilayers

Cited by 97 publications

References 12 publications

Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN

Formation and dissociation of hydrogen-related defect centers in Mg-doped GaN

Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD

Raman Imaging

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