1999
DOI: 10.1103/physrevb.60.1471
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Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

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Cited by 228 publications
(157 citation statements)
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“…1͒, what could be expected for nearly unstrained GaN. 15,11,16 Having this energy one can determine localization energies of the excitons bound to these donors as 7.9, 6.9, and 6.0 meV, respectively.…”
Section: Resultsmentioning
confidence: 88%
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“…1͒, what could be expected for nearly unstrained GaN. 15,11,16 Having this energy one can determine localization energies of the excitons bound to these donors as 7.9, 6.9, and 6.0 meV, respectively.…”
Section: Resultsmentioning
confidence: 88%
“…9͒ and in homoepitaxial layers grown on GaN single crystals. [10][11][12] The identification of the twoelectron line was confirmed by magneto-optical measurements. 13,14 However, the nature of the donor involved in the two-electron transitions has not been identified.…”
Section: Introductionmentioning
confidence: 70%
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“…The doublet structure was tentatively interpreted as due to the internal coupling in the A 0 X complex. 22 In contrast, from their magneto-PL studies, Stepniȩwski et al 25 suggested that the two components of the A 0 X emission do not arise from the splitting of the initial state but from the neutral acceptor ground state instead. Such a conclusion comes from the analysis of the Zeeman splitting patterns at different angles between magnetic field orientation and the crystal c axis.…”
Section: Ganmentioning
confidence: 97%
“…The shallowest A 0 X state has a PL line at about 3.466 eV in unstrained GaN. 22 Its origin is an Mgrelated acceptor, 23 stable in n-GaN and having interesting properties in p-GaN ͑instability and metastability 19 ͒. The acceptor ground state appears to be approximately effectivemasslike, with a strong anisotropy of the bound hole g tensor.…”
Section: Ganmentioning
confidence: 99%