2020
DOI: 10.1016/j.jlumin.2020.117375
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Photoluminescence and thermal properties of trivalent ion-doped lanthanum tellurite anti-glass and glass composite samples

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Cited by 16 publications
(5 citation statements)
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“…The Raman spectra of Eu 3+ -doped glasses in the 1100–200 cm −1 range were presented in Figure 6 . The obtained results are very similar to those published in [ 27 , 39 ]. All Raman spectra have identical features: four-banded maximums at around 320, 460, 800, and 850 cm −1 , respectively.…”
Section: Resultssupporting
confidence: 91%
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“…The Raman spectra of Eu 3+ -doped glasses in the 1100–200 cm −1 range were presented in Figure 6 . The obtained results are very similar to those published in [ 27 , 39 ]. All Raman spectra have identical features: four-banded maximums at around 320, 460, 800, and 850 cm −1 , respectively.…”
Section: Resultssupporting
confidence: 91%
“…In the range of 2θ from 20° to 40°, a broad diffraction hump (inset in Figure 1 —left side—diffraction patterns) might be observed. This is characteristic of amorphous materials [ 39 ]. The phase separation was not observed in all glasses (inset in Figure 1 —right side—SEM photo for Te35Ge glass).…”
Section: Resultsmentioning
confidence: 99%
“…Recently Kaur et al , 44 have reported in situ crystallization in Sm, Eu, Gd, Dy, Er, and Yb singly doped 5La 2 O 3 –95TeO 2 glasses using optical microscopy. The precipitation of micron sized lanthanum tellurite “ anti-glass ” with a crystallite size in the range of 20–1500 μm, exist in different shapes (triangular, rectangular, spherical or flower like) corresponding to different RE 3+ ions in the as-quenched glasses.…”
Section: Resultsmentioning
confidence: 99%
“…Under the viscous sintering conditions used to create ternary GeO 2 –TiO 2 –SiO 2 glasses, the high mobility of GeO 2 , [ 8 ] in combination with higher configurational entropy, [ 12 ] may contribute to haze suppression relative to similar Ti content in TiO 2 –SiO 2 binary glasses by improving compositional homogeneity and thereby reducing scattering interfaces between high and low index domains. During the sintering process, it is expected that GeO 2 ( T m = 1115 °C) will be more mobile in SiO 2 ( T m = 1715 °C) than TiO 2 ( T m = 1843 °C) at a sintering temperature T of 1100 °C because larger T / T m would lead to faster diffusion.…”
Section: Resultsmentioning
confidence: 99%