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Glasses composed of ZnO–SiO2–B2O3–In2O3 with the addition of different content of CuO were prepared by a popular melt–quenching methodology. The effect of the addition of copper oxide in the glass network was investigated using density, FTIR spectroscopy, optical absorption, and photoluminescence spectroscopy. By increasing the concentration of CuO, a decrease in the density is observed, indicating structural changes in the glass network. The structural building units of glasses are $${\mathrm{BO}}_{3}$$ BO 3 ,$${\mathrm{BO}}_{4}$$ BO 4 , and $${\mathrm{ZnO}}_{4}$$ ZnO 4 according to the FTIR spectra. The absorption spectra of these glasses reveal a distinct broad band at 744 nm due to 2$${\mathrm{B}}_{1\mathrm{g}}$$ B 1 g → 2$${\mathrm{B}}_{2\mathrm{g}}$$ B 2 g characteristic transition of cupric ion in the distorted octahedral sites. The optical band gap energies ($${E}_{\mathrm{g}}$$ E g ) and refractive indices of the studied glasses were also evaluated using the ASF, DASF, and Tauc techniques which revealed that (Eg) values are in gradual decrease with a rise content of CuO. The photoluminescence analysis including emission and CIE chromaticity of the prepared samples were carried out. The emission spectra supported divalent state of copper ions in a distorted octahedral geometry of the glass network upon UV excitation at 270 nm. These results may suggest the material of glass as a potential candidate in the photonics applications.
Glasses composed of ZnO–SiO2–B2O3–In2O3 with the addition of different content of CuO were prepared by a popular melt–quenching methodology. The effect of the addition of copper oxide in the glass network was investigated using density, FTIR spectroscopy, optical absorption, and photoluminescence spectroscopy. By increasing the concentration of CuO, a decrease in the density is observed, indicating structural changes in the glass network. The structural building units of glasses are $${\mathrm{BO}}_{3}$$ BO 3 ,$${\mathrm{BO}}_{4}$$ BO 4 , and $${\mathrm{ZnO}}_{4}$$ ZnO 4 according to the FTIR spectra. The absorption spectra of these glasses reveal a distinct broad band at 744 nm due to 2$${\mathrm{B}}_{1\mathrm{g}}$$ B 1 g → 2$${\mathrm{B}}_{2\mathrm{g}}$$ B 2 g characteristic transition of cupric ion in the distorted octahedral sites. The optical band gap energies ($${E}_{\mathrm{g}}$$ E g ) and refractive indices of the studied glasses were also evaluated using the ASF, DASF, and Tauc techniques which revealed that (Eg) values are in gradual decrease with a rise content of CuO. The photoluminescence analysis including emission and CIE chromaticity of the prepared samples were carried out. The emission spectra supported divalent state of copper ions in a distorted octahedral geometry of the glass network upon UV excitation at 270 nm. These results may suggest the material of glass as a potential candidate in the photonics applications.
In this study, we present a comprehensive investigation into the impact of combined oxygen and argon flow rates on the physical properties of Cr2O3 thin films produced via reactive DC magnetron sputtering. Additionally, we explore the influence of oxygen flow rate on various aspects, including structural, morphological, optical, chemical, and electrical characteristics of the sputtered Cr2O3 thin films. Our analysis, based on XRD results, reveals the polycrystalline nature of the films. Surface morphology was examined through scanning electron microscopy. Optical analysis indicates a band gap ranging from 2.70 eV to 2.99 eV for the films. X-ray photoelectron spectroscopy analysis shows the splitting of Cr 2p core spectra into Cr 2p3/2 and Cr 2p1/2 domains within the range of 573 eV to 585 eV, alongside the presence of satellite peaks. Moreover, extracted electrical properties reveal the p-type conductivity of the deposited Cr2O3 thin film under various oxygen flow rates. Furthermore, we fabricate and characterize an ITO/p-Cr2O3/Al Schottky diode to provide additional insights into p-Cr2O3/Al Schottky diodes. Overall, this study contributes valuable insights and enhances our understanding of Cr2O3 thin film properties, particularly in the context of semiconductor devices like Schottky diodes.
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