Photoluminescence Characterization of Defects in Rapidly Annealed Ultra Shallow Junctions

Yoshimoto, Masahiro; Okutani, Masashi; Murai, Gota; Tagawa, Shuji; Saikusa, Hiroki; Takashima, Shuhei; Yoo, Woo Sik

doi:10.1149/2.005305jss

Cited by 7 publications

(9 citation statements)

References 43 publications

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“…In our RTPL measurements on reverse biased pn junctions with a transparent electrode in the photo excitation side, proportional RTPL intensity decrease, as a function of the reverse bias increase, was observed. 34 In-line monitoring of materials and devices which are expected to be identical, can be done very easily by comparing various characteristics of PL spectra measured under the same excitation condition, such as spectral distribution, intensity, peak position and FWHM at a given measurement temperature. Few examples of RTPL applications in Si device processes can be found in previous reports.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Temperature Dependence of Photoluminescence Spectra from Crystalline Silicon

Yoo¹,

Kang²,

Murai

et al. 2015

ECS J. Solid State Sci. Technol.

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Photoluminescence (PL) spectra from lightly boron (B) doped p − -Si(100) under 488.0 nm Ar + ion laser excitation over the temperature range of 22 K-290 K is presented. Change of PL peak height (maximum intensity), peak position, peak area (areal intensity), full-width-at-half-maximum (FWHM: peak width) were determined as a function of temperature. PL intensity was sharply decreased with temperature increase in the temperature range of 22 K -170 K and then slowly increased again in the temperature range of 170 K-290 K. Phonon replicas of a relatively sharp band-to-band (or band edge (BE)) PL peak were clearly measured at low temperatures (≤90 K). PL spectra became broader and the phonon replicas were barely distinguishable as the temperature was increased. The envelope of the main PL peak and the broadening of peak width with the Si temperature were qualitatively in good agreement with the Maxell-Boltzmann probability distribution function. The direction of peak position shift with Si temperature change was also in good agreement with the temperature dependence of the Si bandgap. All measured PL spectra were curve fitted using combinations of modified Gaussian function(s) and standard Gaussian function(s). A simplified curve fitting method for broad PL spectra, consisting of the BE peak and band tail peak, using an exponentially modified Gaussian (EMG or ExGaussian) function and a number of standard Gaussian functions, was proposed from a practical usage point of view. Radiative recombination processes in Si and potential industrial applications of the PL characterization technique were discussed. For the characterization of electrical behaviors of Si, resistivity, carrier concentration, mobility and Hall effect measurements were routinely inspected during wafer fabrication and incoming quality control at the wafer fabs.1 A number of noncontact characterization techniques, such as microwave detected photoconductance decay (μ-PCD)1,2 and inductively coupled quasi-steady-state photoconductance (QSSPC), 1,3 have been used for in-line monitoring of contamination and process induced modulation of electrical behaviors of Si. Steady state PCD measurement techniques 4 enabled by improved laser technology were recently introduced.With the introduction of photoluminescence (PL) imaging and spectrum analysis, a noncontact, purely optical technique is now available for spatially resolved electrical characterization. For industrial applications, the ease of measurement without special sample preparation is important. This is especially true for in-line monitoring applications in semiconductor device manufacturers. PL measurements at room temperature (RT) are preferred. However, the RTPL spectra from Si are generally very broad and it is difficult to identify the origin of variations in RTPL spectra. In this paper, temperature dependence of PL spectra from lightly boron (B) doped p − -Si(100) was measured in the temperature range of 22 K-290 K and the effect of temperature on the change of PL spectra was investigated. Practic...

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Section: Resultsmentioning

confidence: 99%

“…Few examples of RTPL applications in Si device processes can be found in previous reports. 7,[10][11][12][13][14][15][16][28][29][30][31]34…”

Section: Resultsmentioning

confidence: 99%

Temperature Dependence of Photoluminescence Spectra from Crystalline Silicon

Yoo¹,

Kang²,

Murai

et al. 2015

ECS J. Solid State Sci. Technol.

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“…Nevertheless, there are some PL lines in c-Si whose origin at the atomic level is not clear yet. The identification of the particular defects that originate PL lines is important to turn PL into a non-destructive characterization technique for defect identification [3], and to explore the nature of these radiative defects, which is interesting from a technological point of view.…”

Section: Introductionmentioning

confidence: 99%

Insights on the atomistic origin of X and W photoluminescence lines inc-Si fromab initiosimulations

Santos¹,

Aboy²,

López³

et al. 2016

J. Phys. D: Appl. Phys.

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Abstract.We have used atomistic simulations to identify and characterize interstitial defect cluster configurations candidates to W and X photoluminescence centers in crystalline Si. The configurational landscape of small self-interstitial defect clusters has been explored through nanosecond annealing and implantation recoil simulations using classical molecular dynamics. Among the large collection of defect configurations obtained, we have selected those defects with the trigonal symmetry of the W center, and the tetrahedral and tetragonal symmetry of the X center. These defect configurations have been characterized using ab initio simulations in terms of their donor levels, their local vibrational modes, the defect induced modifications of the electronic band structure, and the transition amplitudes at band edges. We have found that the so called I 3 -V is the most likely candidate for W PL center. It has a donor level and local vibrational modes in better agreement with experiments, a lower formation energy, and stronger transition amplitudes than the so called I 3 -I, which was previously proposed as W center. With respect to defect candidates to X PL center, our calculations have shown that none of analyzed defect candidates match all of the experimental characteristics of the X center. Although the Arai tetra-interstitial configuration previously proposed as X center cannot be excluded, the other defect candidates to X center found, I 3 -C and I 3 -X, cannot either being discarded.

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“…A well reliable reproducibility and control of dopant purity, dosage and spatial distribution for the ultra-shallow doped layers can be achieved by ultralow-energy ion-implantation techniques and fast annealing process 1 – 3 . The main purpose of fast annealing process for the ultra-shallow junction (USJ) device in ULSI technology is to activate the dopant atoms and confine the dopant diffusion region by the fast annealing treatment, such as laser, spike and flash annealing 4 – 6 . Qualitative study for this near surface region of dopant-implanted Si after fast annealing process becomes an essential and important subject for semiconductor foundry to optimize the implant and annealing conditions as the nano-device scales down below 10 nm.…”

Section: Introductionmentioning

confidence: 99%

“…However, the complex phenomena in the implanted region with ultrathin thickness bring about the difficulties on reliable analyses. Recently, ultraviolet (UV) Raman spectroscopy was performed on annealed USJ 6 , 14 , 15 . UV Raman spectroscopy reveals the variation between the amorphous phase and recrystallized phase.…”

Section: Introductionmentioning

confidence: 99%

The chemical states and atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) via laser annealing

Lee

Kao

et al. 2017

Sci Rep

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Further scale down the dimension of silicon-based integrated circuit is a crucial trend in semiconductor fabrication. One of the most critical issues in the nano-device fabrication is to confirm the atomic structure evolution of the ultrathin shallow junction. In this report, UV Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray absorption near edge structure (XANES) and reflective second harmonic generation (RSHG) are utilized to monitor the pulse laser induced atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) at room and cold substrate temperature. A peak feature around 480 cm−1 resolved in UV Raman spectra indicates the formation of Si-B bond after the laser irradiation. The red shift of binding energy of Si element (~99 eV) in XPS and the evolution of absorption peak (~196.2 eV) in XANES reveal that the changes in the chemical states of ultra shallow junction strongly correlate to the activation process of Boron implantation, which is confirmed by RSHG measurement. The substrate temperature effect in the recrystallization of Boron implanted region is also realized by cross-section high-resolution TEM (HRTEM). The phenomena of Si-B bond formation and ultra-shallow junction recrystallization can be traced and applied to improve the reliability of Si ultra shallow junction in the future.

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Photoluminescence Characterization of Defects in Rapidly Annealed Ultra Shallow Junctions

Cited by 7 publications

References 43 publications

Temperature Dependence of Photoluminescence Spectra from Crystalline Silicon

Temperature Dependence of Photoluminescence Spectra from Crystalline Silicon

Insights on the atomistic origin of X and W photoluminescence lines inc-Si fromab initiosimulations

The chemical states and atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) via laser annealing

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