Photoluminescence characterization of interlayer carrier injection from InGaAs quantum well to InGaAs surface quantum dots with respect to GaAs spacer thickness

Ultra-broadband depolarization based on directly-coupled quantum wire-to-well modulation and their aliasing effect for polarization-insensitive light-emitting diodes

“…Nowadays, it is well known that strained light-emitting devices use various III–V and II–VI compounds as active materials to cover a more extensive wavelength range, 1–3 such as InGaN (0.4–1.8 μm), AlGaAs (0.5–0.9 μm), InGaAs (0.9–3.4 μm), and InGaAsP (0.9–1.7 μm). Therefore, strained light-emitting devices have achieved a very wide range of applications in the areas of lighting, 4 disinfection systems, 5 medical applications, 6 panel displays, 7 optical communications, 8 and so on.…”