Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N δ-doped superlattice structure

Haque, Dulal; Kamata, Norihiko; Islam, Abu Zafor Md. Touhidul; Honda, Zentaro; Yagi, Shuhei; Yaguchi, Hiroyuki

doi:10.1016/j.optmat.2019.01.047

“…The structural properties of the new sub-band can be controlled properly by changing the amount of the incorporated N atoms inside the host GaAs. The new sub-bands allows the valence band (VB) to intermediate band (IB) and intermediate band (IB) to conduction (CB) carrier's transitions and widens spectral response up to the infrared range, which contributes to raise the overall performance parameters of the cell [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Design and analysis of GaAsN based solar cell for harvesting visible to near-infrared light

Haque¹,

Ali²,

Hossain³

et al. 2022

Phys. Scr.

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In the present study, the performance parameters of GaAsN dilute nitride-based semiconductor solar cell with and without AlGaAs blocking layers have been investigated in detail by Solar Cell Capacitance Simulator in one dimensional software program (SCAPS-1D). The thickness of absorber, buffer, and blocking layers are varied to achieve the improvement of open circuit voltage, short circuit current, fill factor, efficiency and also to optimize the device structure. The impact of doping and defect densities on the solar cell performance parameters have been analyzed minutely inside the absorber, buffer, and blocking layers. The solar cell thermal stability parameters are also investigated in the temperature region from 273K to 373K. The efficiency of 43.90% and 40.05% are obtained from the proposed solar cells with and without AlGaAs blocking layer, respectively. The present findings may provide insightful approach for fabricating feasible, cost effective, and efficient dilute nitride solar cell.

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“…The structural properties of the new sub-band can be controlled properly by changing the amount of the incorporated N atoms inside the host GaAs. The new sub-band widens spectral response up to the infrared range, which contributes to raise the overall performance parameters of the cell [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Design and Simulation of GaAsN Based Solar Cell with AlGaAs Blocking Layer for Harvesting Visible To Near-Infrared Light

Haque

¹

,

Ali

²

,

Halim

³

et al. 2021

Preprint

Self Cite

0

View full text Add to dashboard Cite

In the present study, the performance parameters of GaAsN dilute nitride-based semiconductor solar cell with and without AlGaAs blocking layers have been investigated in detail by Solar Cell Capacitance Simulator in one dimensional software program (SCAPS-1D). The thickness of absorber, buffer, and blocking layers are varied to achieve the improvement of open circuit voltage, short circuit current, fill factor, efficiency and also to optimize the device structure. The impact of doping and defect densities on the solar cell performance parameters have been analyzed minutely inside the absorber, buffer, and blocking layers. The solar cell thermal stability parameters are also investigated in the temperature region from 273K to 373K. The efficiency of 43.90% and 40.05% are obtained from the proposed solar cells with and without AlGaAs blocking layer, respectively. The present findings may provide insightful approach for fabricating feasible, cost effective, and efficient dilute nitride solar cell.

show abstract

Spectral Change of E− Band Emission in a GaAs:N δ-Doped Superlattice Due to Below-Gap Excitation and Its Discrimination from Thermal Activation

Haque

¹

,

Kamata

²

,

Islam

³

et al. 2019

Journal of Elec Materi

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Photoluminescence characterization of nonradiative recombination centers in MOVPE grown GaAs:N δ-doped superlattice structure

Cited by 4 publications

References 43 publications

Design and analysis of GaAsN based solar cell for harvesting visible to near-infrared light

Design and analysis of GaAsN based solar cell for harvesting visible to near-infrared light

Design and Simulation of GaAsN Based Solar Cell with AlGaAs Blocking Layer for Harvesting Visible To Near-Infrared Light

Spectral Change of E− Band Emission in a GaAs:N δ-Doped Superlattice Due to Below-Gap Excitation and Its Discrimination from Thermal Activation

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