Photoluminescence characterization of plasma exposed silicon surfaces

Henry, Anne; Ḿonemar, B.; Lindström, J. L.; Bestwick, TD; Oehrlein, G. S.

doi:10.1063/1.350172

Cited by 33 publications

(19 citation statements)

References 19 publications

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“…Similar broad sub-bandgap PL bands have been described on plasma treated Si [53][54][55], and were attributed to plasma-induced defects at the Si surface. However, the infrared luminescence could only be observed at low temperatures (T < 130 K).…”

Section: Optical Properties Of Ge Nanocrystals Embedded In Zro 2 and supporting

confidence: 73%

Size and Shape Controlled Semiconductor Nanocrystals Synthesized by RF‐Sputtering Techniques for Electronic and Optoelectronic Applications

Lehninger

Beyer

Schneider

et al. 2015

Contrib. Plasma Phys.

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Group IV (Ge and Si) nanocrystals embedded in a dielectric matrix were prepared via rf magnetron sputtering by the deposition of superlattices of stoichiometric and substoichiometric oxide layers and subsequent annealing. By this way Ge nanocrystals in a (Ta)ZrO x and Si nanocrystals in an SiO2 matrix were prepared in a size and shape controlled manner. In case of the Ge-ZrO2 system, elongated Ge nanocrystals in a crystallized ZrO2 matrix were formed for annealing temperatures above 660 • C. Starting from a Si3N4 interface of the Si wafer, a preferential orientation between the Ge and ZrO2 lattice can be stated. Doping the ZrO2 matrix additionally with Ta increases the crystallization temperature of the ZrO2 matrix and leads to the formation of Ge nanocrystals embedded in an amorphous TaZrOx matrix. The Ge nanocrystals were investigated by photoluminescence measurements and implemented into metal-insulator-semiconductor capacitor to investigate their potential for charge trapping devices. The prepared nano floating gate devices show good charging characteristics with a maximum memory window of 5 V and a slope of the writing voltage vs. memory window characteristics of 0.8-1. All luminescence centers seen in the Ge-(Ta)ZrOx system can be attributed to defects either from the Ge nanocrystal surface, the (Ta)ZrOx matrix or the Si substrate itself. Si nanocrystals were fabricated in the same way in an amorphous SiO2 film after annealing above 900 • C. The formed Si nanocrystals act as superior sensitizer for Er 3+ ions which were ion implanted into the films followed by an additional subsequent anneal, varied between 700 and 1000 • C. The Si nanocrystal -Er 3+ system was successfully implemented into a slot waveguide structure showing a strong polarization dependent field enhancement in both emission and excitation geometry.

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Section: Optical Properties Of Ge Nanocrystals Embedded In Zro 2 and supporting

confidence: 73%

Size and Shape Controlled Semiconductor Nanocrystals Synthesized by RF‐Sputtering Techniques for Electronic and Optoelectronic Applications

Lehninger

Beyer

Schneider

et al. 2015

Contrib. Plasma Phys.

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“…The formation mechanism of C-and G-centers is well established and includes the radiation-induced displacement of a carbon atom to form either a close pair of interstitial oxygen and carbon atoms (C-centers) or carbon substitutional -Si interstitial -carbon substitutional complexes (G-centers). The formation of these defects after CF4 RIE is explained either as a result of bombardment-induced displacement of residual carbon atoms [11] or as a result of carbon implantation from the etching plasma [10]. For SF6 RIE, which does not contain carbon atoms in the etching gas, ion bombardment should be considered as a dominant mechanism of C-and G-centre formation in agreement with Ref.…”

Section: Comparison Of Cf4 and Sf6 Riementioning

confidence: 72%

“…The RIE-induced chemical modifications of the surface are usually investigated by X-ray photoemission spectroscopy (XPS) [4-61, secondary-ion mass spectroscopy (SIMS) [6] and ellipsometry [4,5]. The information about the RIE-induced defects could be obtained using both electrical techniques, such as deep level transient spectroscopy (DLTS) and capacitance-voltage (C-V) measurements [7][8][9], and optical photoluminescence (PL) studies [10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Characterization of Defects Created in Silicon Due to Etching in Low-Pressure Plasmas Containing Fluorine and Oxygen

et al. 1995

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Defect characterization in n-type silicon after the reactive ion etching (RIE) in low-pressure plasmas containing fluorine and oxygen is performed by using photoluminescence (PL) and deep level transient spectroscopies (DLTS). It is shown that RIE treatment results in the formation of (i) luminescence centers giving rise to the C-and G-excitonic lines and broad emission bands related to radiation-induced defect complexes and extended defects and (ii) several electron traps located at 0.16 eV, 0.26 eV, 0.43 eV and 0.58 eV below the conduction band. The addition of oxygen to the SF6 and CF4 plasma is shown to cause nonuniform stress in the near surface region. This stress is responsible for the experimentally observed splitting of the C-and Gexcitonic lines, a low energy shift of the phosphorous bound exciton lines, as well as the splitting of the DLTS spectra. It is shown that the stress field is highly inhomogeneous across the wafer, and is rather related to the RIE-induced extended defects than caused by the reaction layer formed on the Si surface.

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“…The leakage mainly results from the dislocation, stacking faults, and cavities induced by carbon rich polymer formation during the plasma etch and high temperature annealing. [4][5][6][7][8] Conclusions Two types of isolation schemes have been compared by using different gas chemistries. Semi-recessed LOCOS process with low carbon content gas CHF 3 /CF 4 /Ar has demonstrated that junction leakage current is comparable to that with conventional LOCOS.…”

Section: Resultsmentioning

confidence: 99%

Carbon Rich Plasma-Induced Damage in Silicon Nitride Etch

Ye¹,

Zhou²

2000

J. Electrochem. Soc.

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Conventional and semi-recessed localized oxidation of silicon (LOCOS) processes have been compared in terms of junction current leakage. Three different Si 3 N 4 etch chemistries, SF 6 /CHF 3 -SF 6 /HBr/O 2 , CHF 3 /CF 4 /Ar, and CHF 3 /CF 4 /Ar/CO, have been used to etch active Si 3 N 4 with two types of plasma etchers, conventional silicon nitride and silicon oxide etchers. It has been found that the junction leakage current with CHF 3 /CF 4 /Ar in the semi-recessed LOCOS has slightly higher value than that with the conventional LOCOS. However, with CO addition to CHF 3 /CF 4 /Ar gases, the junction leakage current resulted from plasma-induced damage on silicon substrate is much higher. The results obtained from X-ray photoelectron spectroscopy and atomic force microscopy indicate that carbon-rich perfluoronated polymers and plasma etch induced silicon substrate roughness with CHF 3 /CF 4 /Ar/CO gases contribute to the higher junction leakage.

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Photoluminescence characterization of plasma exposed silicon surfaces

Cited by 33 publications

References 19 publications

Size and Shape Controlled Semiconductor Nanocrystals Synthesized by RF‐Sputtering Techniques for Electronic and Optoelectronic Applications

Size and Shape Controlled Semiconductor Nanocrystals Synthesized by RF‐Sputtering Techniques for Electronic and Optoelectronic Applications

Characterization of Defects Created in Silicon Due to Etching in Low-Pressure Plasmas Containing Fluorine and Oxygen

Carbon Rich Plasma-Induced Damage in Silicon Nitride Etch

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