Photoluminescence Characterization of the Crystalline Quality in Intrinsic GaAs Epitaxial Layers

Torres‐Delgado, G.; Mendoza-Álvarez, J.G.; Zendejas, B. E.

doi:10.1007/978-3-642-76376-2_39

Cited by 2 publications

(2 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It is known that local fields produced by fluctuations of the composition and location of the atoms in the crystal, as well as impurities and/or defects can cause exciton dissociation, making this transition undetectable. The results previously obtained emphasize the conclusions of Torres-Delgado et al, 10 which claim that the higher crystalline quality layers are obtained growing in nearequilibrium conditions. In addition, the broad band associated with the presence of gallium antisites and arsenic vacancies ͑around 1.444 eV͒ is not observed.…”

Section: A Photoluminescencesupporting

confidence: 88%

“…8,9 A recent study reports that the defects ͑gallium antisites͒ found by growing with a certain supercooling cannot be appreciated in photoluminescence ͑PL͒ measurements even though the formation of terraces can be morphologically present growing from saturation solutions. 10 Among the large quantity of III-V materials obtained by LPE, the Al x Ga 1Ϫx As/GaAs system has occupied a privileged position for more than 20 years. Therefore, its optical and electrical properties have been extensively studied.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Growth and optical characterization of indirect-gap AlxGa1−xAs alloys

Purón

Martı́nez-Criado

Riech

et al. 1999

Journal of Applied Physics

View full text Add to dashboard Cite

Nonintentionally doped AlxGa1−xAs layers with 0.38⩽x⩽0.84 were grown on (100) GaAs substrates by liquid phase epitaxy (LPE) under near-equilibrium conditions. The crystalline quality of the samples was studied by photoluminescence at 2 K and room temperature Raman spectroscopy. The peculiar behavior in the photoluminescence intensities of the indirect bound exciton line and the donor–acceptor pair transition is explained from the evolution of the silicon donor binding energy according to the aluminum composition. It was also possible to observe the excitonic transition corresponding to the AlxGa1−xAs/GaAs interface, despite the disorder and other factors which are normally involved when growing high-aluminum-content layers by this technique. Furthermore, Raman measurements show the quadratic variations of longitudinal optical phonon frequencies with aluminum concentration in good agreement with previous experimental results. In this work we show that high quality indirect-gap AlxGa1−xAs samples can be grown by LPE under near-equilibrium conditions.

show abstract

Section: A Photoluminescencesupporting

confidence: 88%

Section: Introductionmentioning

confidence: 99%