2021
DOI: 10.48550/arxiv.2110.15119
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Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots

Jeffrey Schuster,
Johannes Aberl,
Lada Vukušić
et al.

Abstract: The Si/SiGe heterosystem would be ideally suited for the realization of complementary metaloxide-semiconductor (CMOS)-compatible integrated light sources, but the indirect band gap, exacerbated by a type-II band offset, makes it challenging to achieve efficient light emission. We address this problem by strain engineering in ordered arrays of vertically close-stacked SiGe quantum dot (QD) pairs. The strain induced by the respective lower QD creates a preferential nucleation site for the upper one and strains t… Show more

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