Photoluminescence excitation spectroscopy of p-GaAs surfaces and AlGaAs/GaAs interfaces supported by numerical modeling

Photoluminescence excitation spectroscopy is a contactless characterization technique that can provide valuable information about the surface and bulk recombination parameters of a semiconductor device, distinct from other sorts of photoluminescent measurements. For this technique, a temperature-tuned light emitting diode (LED) has several advantages over other light sources. The large radiation density offered by LEDs from near-infrared to ultraviolet region at a low cost enables efficient and fast photoluminescence measurements. A simple and inexpensive LED-based setup facilitates measurement of surface recombination velocity and bulk Shockley-Read-Hall lifetime, which are key parameters to assess device performance. Under the right conditions, this technique can also provide a contactless way to measure the external quantum efficiency of a solar cell.

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Steady-state photoluminescent excitation characterization of semiconductor carrier recombination

Bhosale

Moore

Wang

et al. 2016

Review of Scientific Instruments

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Photoluminescence excitation spectroscopy of p-GaAs surfaces and AlGaAs/GaAs interfaces supported by numerical modeling

Cited by 1 publication

References 8 publications

Steady-state photoluminescent excitation characterization of semiconductor carrier recombination

Steady-state photoluminescent excitation characterization of semiconductor carrier recombination

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