2002
DOI: 10.1103/physrevb.66.155317
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Photoluminescence features on the Raman spectra of quasistoichiometric SiC nanoparticles: Experimental and numerical simulations

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Cited by 123 publications
(68 citation statements)
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“…A similar experimental phenomenon has been reported for SiC nanoparticles [23], a visible PL emissions were enhanced by the amorphous structure fraction, surface chemical disorder and defect (carbon or silicon vacancies) contents induced by oxidation, as shown in this work that photoluminescence enhancement comes from the increasing defect density by solid solution reaction in the CdS crystals.…”
Section: Resultssupporting
confidence: 76%
“…A similar experimental phenomenon has been reported for SiC nanoparticles [23], a visible PL emissions were enhanced by the amorphous structure fraction, surface chemical disorder and defect (carbon or silicon vacancies) contents induced by oxidation, as shown in this work that photoluminescence enhancement comes from the increasing defect density by solid solution reaction in the CdS crystals.…”
Section: Resultssupporting
confidence: 76%
“…In agreement with literature data, the 1.98 eV shoulder on the low energy side was assigned to the presence of substitutional oxygen on carbon site (O C defects), unintentionally incorporated in the silicon carbide lattice [Gali et al, 2002;Kassiba et al, 2002). The high-energy emission at 3.15 eV could be related to the nanometric inclusions of hexagonal SiC polytypes with E G-6H = 3.15 eV, E G-4H = 3.24 eV (Bechstedt et al, 1997) as observed by high-resolution TEM (Fig.…”
Section: Growth and Characterization Of Core-shell Nwsupporting
confidence: 74%
“…The band gap of Si at room temperature is 1.12 eV whereas diverse for SiC because it exists in over 200 crystalline forms and among them the most common types are 3C, 6H, and 4H, which have band gaps of 2.2, 3.02, and 3.20 eV, respectively [1]. Silicon carbide is a promising material due to its unique ability to adopt different crystalline polytypes which monitor the band gap and then the electronic and optical properties [2][3][4]. Despite being an indirect band gap semiconductor, SiC is used in several high-performance electronic and optical devices due to its unique physical and electronic properties.…”
Section: What Is So Fascinating About Silicon Carbide?mentioning
confidence: 99%
“…This wide bandgap biocompatible [26] material was recently shown to exhibit blue/yellow photoluminescence in nanoscale structures [27]. The SiC nanoparticles are characterized by versatile properties such as dielectric behavior marked by interfacial polarizations [28][29][30] as well as the vibrational and luminescence properties which point out the main role of surface nature [3,4].…”
Section: Silicon Carbide Nanostructures Versusmentioning
confidence: 99%