Photoluminescence from a single InGaAs epitaxial quantum rod

Abstract

Microphotoluminescence (μ-PL) experiment has been performed on a structure with InGaAs/GaAs epitaxial quantum rods (quantum dots with the aspect ratio as high as 4.1) grown by depositing short-period InAs/GaAs superlattice by molecular beam epitaxy on GaAs substrate. The exciton and biexciton emission from a single quantum rod has been detected via the excitation power dependence of the μ-PL spectra. The origin of the single rod lines has been confirmed by a rate equation model. For a number of quantum rods within the investigated ensemble, the biexciton binding energy has been determined to be in the range of 1.0–2.2meV.

Quantum Dashes and Quantum Rods: Optical Properties and Application Prospects

“…It has been combined with a single grating 0.55 m focal length monochromator equipped with a liquid nitrogen cooled multichannel linear InGaAs charged coupled device and a thermoelectrically cooled long wavelength InGaAs PIN photodiode serving as detectors. Further experimental details have been described elsewhere [11][12][13].…”

“…Similar motivation as in the previous section concerns the quantum rods, which however, as based on GaAs substrate, can potentially be interesting for the applications at shorter wavelengths (up to 1.3 µm usually). The surface density in this case is much lower than for the dashes (10 10 cm −2 ) so in order to select the single emission lines the mesa structures patterning was not necessary [13]. Figure 8 shows the excitation dependent low temperature PL spectra exhibiting two emission lines.…”