Photoluminescence from B-doped Si nanocrystals

Fujii, Minoru; Hayashi, Shinji; Yamamoto, Keiichi

doi:10.1063/1.367976

Cited by 114 publications

(89 citation statements)

References 18 publications

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“…As one can see on Fig. 9 (a) with increasing of B concentration, the PL intensity monotonously decreases (Fujii et al, 1998) (Müller et al, 1999) (Stegner et al, 2008). In P-doped Si nanocrystals, the situation is different.…”

Section: Shallow-impurity Doped Si Nanostructuresmentioning

confidence: 85%

Silicon-Based Third Generation Photovoltaics

Nychyporuk¹,

Lemiti²

2011

Solar Cells - Silicon Wafer-Based Technologies

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Section: Shallow-impurity Doped Si Nanostructuresmentioning

confidence: 85%

Silicon-Based Third Generation Photovoltaics

Nychyporuk¹,

Lemiti²

2011

Solar Cells - Silicon Wafer-Based Technologies

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“…Figure 3.7a shows the examples. With increasing B concentration, the PL intensity decreases monotonously [27,29]. The decrease in the PL intensity is accompanied by the shortening of the lifetime.…”

Section: Pl From B-doped Si Nanocrystalsmentioning

confidence: 91%

Optical Properties of Intrinsic and Shallow Impurity‐Doped Silicon Nanocrystals

Fujii

2010

Silicon Nanocrystals

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The electronic band structure of silicon (Si) crystals is significantly modified when the size is reduced to below the exciton Bohr radius ($4.9 nm) of bulk Si crystals due to the quantum size effect. The quantum size effect manifests itself as a high-energy shift of the luminescence band and an enhancement of the spontaneous emission rate. Furthermore, enlargement of the singlet-triplet splitting energy of exciton states with decreasing size has been demonstrated [1-4]. The modified band structure opens up new application of Si nanocrystals in the fields where bulk Si crystal has not been involved. Besides well-known high-efficiency visible photoluminescence (PL), one of the most exotic new feature of Si nanocrystals is their ability to generate a kind of active oxygen species called singlet oxygen by energy transfer from excitons to oxygen molecules (O 2 ) adsorbed onto the surface of Si nanocrystals [5]. This feature is due to the molecule-like energy structure of Si nanocrystals and is a direct consequence of the quantum size effects. Similarly, efficient photosensitization of rare earth ions by Si nanocrystals has been reported and this phenomenon is expected to lead to the development of an efficient planar waveguide-type optical amplifier operating at the optical telecommunication wavelength. Since almost all new features of Si nanocrystals arise from the modified electronic band structure, its deep understanding is indispensable to explore new nano-Si-based research fields and devices. Fortunately, the energy structure of Si nanocrystals is almost clarified, at least qualitatively, by detailed optical spectroscopy. In Section 3.2, we briefly summarize fundamental optical properties of intrinsic Si nanocrystals [1][2][3][4][5][6][7][8].The properties of Si nanocrystals can be controlled by the size, shape, surface termination, and so on. An additional freedom of material design can be introduced by impurity doping. The introduction of shallow impurities in a semiconductor significantly modifies its optical and electrical transport properties. Actually, a precise control of an impurity profile is key to achieve desirable functions in almost all kinds Silicon Nanocrystals: Fundamentals, Synthesis and Applications. Edited by Lorenzo Pavesi and Rasit Turan

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“…Si NCs embedded in SiO 2 are widely investigated for their novel size-dependent electronic and optoelectronic properties [6][7][8][9][10][11][12][13]. In particular, the exploitation of the properties of such systems in real devices demands an accurate control of their doping.…”

Section: Resultsmentioning

confidence: 99%

“…Doping of semiconductor nanostructures has proven to be distinct from the corresponding bulk materials [1][2][3][4][5] and recently great attention has been focused on developing practical methodologies to dope and control the doping properties of Si nanostructures such, as nanoclusters (NCs) [6][7][8][9][10][11][12][13] and nanowires [14][15][16][17], and on developing theoretical approaches to understand these properties [18][19][20][21][22][23]. The control of doping properties of Si nanostructures allows the fabrication of complex nanomaterials characterized by unpreceded electrical and optoelectronic functionalities.…”

Section: Introductionmentioning

confidence: 99%

A Combined Ion Implantation/Nanosecond Laser Irradiation Approach towards Si Nanostructures Doping

Ruffino

Romano

Carria

et al. 2012

Journal of Nanotechnology

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The exploitation of Si nanostructures for electronic and optoelectronic devices depends on their electronic doping. We investigate a methodology for As doping of Si nanostructures taking advantages of ion beam implantation and nanosecond laser irradiation melting dynamics. We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO 2 /Si/SiO 2 multilayer and its spatial redistribution after annealing processes. As accumulation at the Si/SiO 2 interfaces was observed by Rutherford backscattering spectrometry in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO 2 /Si interfaces. A concentration of 10 14 traps/cm 2 has been evaluated. This result opens perspectives for As doping of Si nanoclusters embedded in SiO 2 since a Si nanocluster of radius 1 nm embedded in SiO 2 should trap 13 As atoms at the interface. In order to promote the As incorporation in the nanoclusters for an effective doping, an approach based on ion implantation and nanosecond laser irradiation was investigated. Si nanoclusters were produced in SiO 2 layer. After As ion implantation and nanosecond laser irradiation, spectroscopic ellipsometry measurements show nanoclusters optical properties consistent with their effective doping.

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Photoluminescence from B-doped Si nanocrystals

Cited by 114 publications

References 18 publications

Silicon-Based Third Generation Photovoltaics

Silicon-Based Third Generation Photovoltaics

Optical Properties of Intrinsic and Shallow Impurity‐Doped Silicon Nanocrystals

A Combined Ion Implantation/Nanosecond Laser Irradiation Approach towards Si Nanostructures Doping

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