2008
DOI: 10.1088/1742-6596/100/4/042041
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Photoluminescence from CdxHg1-xTe

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Cited by 4 publications
(2 citation statements)
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“…24 This is in agreement with Lusson et al 25 and indicates that the peaks are impurity related. Hg vacancies and n-type background doping are common in MBE-grown CdHgTe 1,2 and are most likely the origin of the PL peaks.…”
Section: Photoluminescencesupporting
confidence: 89%
“…24 This is in agreement with Lusson et al 25 and indicates that the peaks are impurity related. Hg vacancies and n-type background doping are common in MBE-grown CdHgTe 1,2 and are most likely the origin of the PL peaks.…”
Section: Photoluminescencesupporting
confidence: 89%
“…Besides the small gap natural materials, one can synthesize complex manmade materials with manipulated small gaps. [38] In the point of view, it is very much feasible to develop photovoltaic devices aiming at infrared photons by using the same p-n junction mechanism that applied in current solar panels. Although the low opencircuit output voltage (~ 0.1 V) requires more cascade stages, it is just an engineering problem.…”
Section: Shengyong Xu and Xiaohui Sumentioning
confidence: 99%