“…Among the III-nitrides, InN has the smallest band gap and effective electron mass [11,12,43], which is attractive for high-frequency electronic devices, near-infrared optoelectronics, and high-efficiency solar cells [44]. Moreover, because of the high intrinsic surface donor density, InN is considered as a very promising material for highly sensitive detection of ions, gases, vapors, and liquids [45,46,47,48].…”