Photoluminescence from pressure-annealed silicon dioxide and nitride films

Misiuk, A.; Iller, A.; Rebohle, L.; Łukaszewicz, Marcin; Kudla, A.

doi:10.1016/s0026-2714(99)00332-7

Cited by 5 publications

(1 citation statement)

References 7 publications

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“…12,13 Some information on the HT-HP induced effects in SiON can also be found in literature. 14,15 In this work, we report an extended research on the silicon oxynitride films with HT-HP treatment. The goal of this investigation is to clarify microscopic origin of the HT-HP effect on the properties of SiON/Si structures.…”

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confidence: 99%

Properties of Silicon Oxynitride Films Annealed under Enhanced Hydrostatic Pressure

Wong

Liu

et al. 2011

J. Electrochem. Soc.

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Silicon oxynitride films were deposited on Si by plasma-enhanced chemical vapor deposition using ammonia, nitrous oxide, and silane as precursors and subjected to preannealing in an oxygen atmosphere at 1100 or 1150°C under atmospheric pressure ͑10 5 Pa͒ for 5 h. The oxynitride films were then further processed at temperature up to 1100°C under argon hydrostatic pressure up to 1.2 GPa. The effects of high temperature-high hydrostatic pressure ͑HT-HP͒ treatment on the surface morphology, chemical bonding, crystallization effect, and photoluminescence ͑PL͒ of the SiON films were investigated. The PL intensity of silicon-rich oxynitride films is significantly enhanced by HT-HP processing. An explanation of this effect has been suggested.

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confidence: 99%