2008
DOI: 10.1007/s10854-008-9667-4
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Photoluminescence from RF sputtered SiCBN thin films

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Cited by 11 publications
(8 citation statements)
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“…Results from theoretical calculation suggest that the electrical and optical property variation of the as-deposited film may be related to the doping of nitrogen atoms, which may split the valence bond of atoms. Additionally, the Si-B-C-N film also exhibits other physical or thermal properties, such as photoluminescence, small thermal conductivity and thermal expansion coefficient [24].…”
Section: Electrical and Optical Properties Of Thementioning
confidence: 99%
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“…Results from theoretical calculation suggest that the electrical and optical property variation of the as-deposited film may be related to the doping of nitrogen atoms, which may split the valence bond of atoms. Additionally, the Si-B-C-N film also exhibits other physical or thermal properties, such as photoluminescence, small thermal conductivity and thermal expansion coefficient [24].…”
Section: Electrical and Optical Properties Of Thementioning
confidence: 99%
“…has the characteristic of semiconductor, photoluminescence or light transmission [24]. The Si-B-C-N film may be applied in high-temperature photoelectron circuit, communication or control device.…”
Section: Applications Of the Si-b-c-n Film Prepared By Reactive Magnementioning
confidence: 99%
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“…Therefore, these luminescence peaks could be an effect of alloying of BN and SiN. 39) The luminescence originates in band to band transitions (more precisely, transitions between tails in energy bands) and band (band tail) to discrete level transitions; the discrete levels originate in structure defects. 41) Most likely, the luminescent centers can be attributed to the band tail recombination.…”
Section: Final Ceramicmentioning
confidence: 99%