Photoluminescence intensity study of n-InP diodes in the accumulation regime

Abstract

The bias dependence of the photoluminescence (PL) intensity of metal-insulator-n-InP structures is studied. Increasing PL intensity with positive bias is observed. The enhancement of the PL intensity with forward bias results from the enhanced carrier density in the surface accumulation layer and also from improvement of radiative efficiency by the field effect, and eventually from the photon recycling phenomenon. The changes of PL intensity with surface band bending can be explained by using, in the model, an enhanced hole diffusion length in the accumulation region.